J175 Allicdata Electronics

J175 Discrete Semiconductor Products

Allicdata Part #:

J175FS-ND

Manufacturer Part#:

J175

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET P-CH 30V 0.35W TO92
More Detail: JFET P-Channel 30V 350mW Through Hole TO-92-3
DataSheet: J175 datasheetJ175 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: --
Resistance - RDS(On): 125 Ohms
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: J175
Description

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The J175 is an N-Channel Junction Field-Effect Transistor (JFET) used for a variety of applications in electronics systems. It operates on the principle of an electric field effect in a semiconductor, which, in turn, is used to control the current flow between source and drain. The main purpose of a JFET is to serve as an amplifier or switch. This is why JFETs are commonly known as voltage-controlled devices.

The J175, in particular, is particularly suitable for audio and other low-level signal applications due to its low noise performance and low distortion. It is one of the most commonly used JFETs currently available, mainly due to its low cost, good thermal characteristics and high frequency response.

The J175 has a maximum drain current rating of 2 Amps, and a maximum drain voltage rating of 44 Volts.

The J175 utilizes a depletion-mode JFET structure in which the gate-source voltage must be relatively negative to achieve a conducting state between the drain and source. When the gate-source voltage is negative, the depletion region between the gate and the source narrows, allowing current to flow from the source to the drain.

The main advantage of a JFET compared to a bipolar transistor is its low input capacitance and its higher input impedance, providing higher frequency response and greater signal gain. Additionally, JFETs require very little current to operate and also have a very low noise profile. This makes this type of device ideal for audio and RF applications where a high level of linearity is required.

JFETs are also considered to be relatively reliable, as they can withstand high temperature and high voltage shocks. Despite this, they can still be susceptible to damage due the gate-source avalanche breakdown. This phenomenon occurs when the avalanche distance exceeds the channel length and can result in permanent device damage.

Overall, the J175 is an efficient, low cost and reliable FET, suitable for a range of applications such as low noise amplifiers, audio circuits and other analog circuits where low distortion and high linearity are required. Its low capacitance characteristics and higher frequency response make it ideal for these applications and ensure reliable operation.

The specific data is subject to PDF, and the above content is for reference

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