Allicdata Part #: | J177_D26Z-ND |
Manufacturer Part#: |
J177_D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET P-CH 30V 0.35W TO92 |
More Detail: | JFET P-Channel 30V 350mW Through Hole TO-92-3 |
DataSheet: | J177_D26Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 1.5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 800mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 300 Ohms |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J177 |
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The J177_D26Z is a voltage-controlled N-channel junction field-effect transistor (JFET) with a structure specifically designed to achieve low noise. Its n-channel architecture allows the controlled current to flow with a less favourable voltage. The result is a very low bias voltage, stable and quiet operation and improved linearity.
The J177_D26Z is an extremely versatile device and may be used in many different applications. One of the most common applications is as a preamplifier, usually in conjunction with a voltage amplifier to achieve a more accurate signal. It may also be used as an amplifier in instrumentation circuits, such as power supplies and signal conditioning circuits, and as a buffer in low voltage circuits or as a driver for audio and video circuits. In addition, the J177_D26Z can act as a switch and is often used in switching applications.
The working principle of a J177_D26Z is relatively simple. It consists of a gate, a source, and a drain. The gate is a control terminal for the current flowing between the source and the drain. When a voltage is applied to the gate, the resistance between the source and drain changes, allowing more or less current to pass through the device. This makes it a very useful tool for controlling current in circuits.
The J177_D26Z is further distinguished by its use of avalanche breakdown protection. This is achieved by using a “protected diode” underneath the gate, which prevents the source-to-drain junction from depletion under too high voltages. Additionally, the built-in drain resistance reduces the device’s noise characteristics and ensures a low ESR (Equivalent Series Resistance).
The J177_D26Z is also well-suited for use in high input impedance circuits, as its small junction capacitance reduces the current-induced noise, thus improving signal integrity. Furthermore, its low input impedance makes it well-suited for low-power circuits, as the voltage drop across the control current is very small.
In conclusion, the J177_D26Z has many applications and is a good choice for various types of circuitry. Its versatility, low noise, low biased voltage, avalanche breakdown protection, small junction capacitance and low input impedance make it an ideal choice for designing high-quality, low-noise circuits. It can be used for a wide range of applications, from amplifier and driver circuits, to preamplifiers, switching circuits, and instrumentation circuits. This makes it one of the most versatile JFETs available.
The specific data is subject to PDF, and the above content is for reference
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