J177_D27Z

J177_D27Z is a type of Junction Field-Effect Transistor (JFET). This component is mainly used for electrical switches that control the flow of current in circuits. It works by connecting two metal-oxide semiconductor (MOS) terminals together to form an electric junction field. The two MOS terminals are connected through a p-n junction and they are responsible for controlling the current flow in the drains, sources and gates. The drain is typically used to connect the JFET to a power supply. The source is used to provide a path for the current to flow from the drain to the gate. The gate is also used to control the amount of current passing through the JFET. A positive voltage applied to the gate increases the resistance levels of the JFET, which results in fewer electrons passing through the circuit.The operating principle of the D27Z is based on the principle of the field effect. When a reverse bias voltage is applied across the gate and the source, the p-n junction between the gate and the source creates an electric field. This electric field results in the depletion of charge carriers, resulting in high resistance levels in the channel between the drain and the source. By changing the applied voltage, the resistance level in the channel can be adjusted and this can affect how much current may flow through it. The specific application of the J177_D27Z depends on its usage. In audio applications, they are employed as buffers, pre-amplifiers, and power attenuators. They are also used as switches in power supplies and other control systems. They can performs tasks such as current level switching and logic control. Additionally, they are used in various instrumentation and medical applications such as medical imaging. In summary, the J177_D27Z is a type of Junction Field-Effect Transistor (JFET). It works by controlling the flow of current in circuits and is used for audio applications, power supplies, and instrumentation and medical applications. Its main operating principle is based on the principle of the field effect which is caused by the electric field generated between the gate and the source when a reverse bias voltage is applied.

J177,126	NXP USA Inc	0.0 $	1000	JFET P-CH 30V 400MW TO92-...
J177_D74Z	ON Semicondu...	0.0 $	1000	JFET P-CH 30V 0.35W TO92J...
J177_D26Z	ON Semicondu...	0.0 $	1000	JFET P-CH 30V 0.35W TO92J...
J177_D27Z	ON Semicondu...	0.0 $	1000	JFET P-CH 30V 0.35W TO92J...
J177_D75Z	ON Semicondu...	0.0 $	1000	JFET P-CH 30V 0.35W TO92J...
J177	ON Semicondu...	--	1000	JFET P-CH 30V 0.35W TO92J...