J202_D26Z

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J202_D26Z transistors are junction field-effect transistors (JFETs) that operate by controlling the electrical resistance of the channel between the source and drain outputs.JFETs are voltage-controlled devices, meaning the voltage from the gate terminal determines the resistance of the channel and the flow of current. The gate terminal acts like a valve, controlling the current between the source and drain outputs. The higher the gate voltage, the lower the resistance between the source and drain.

The most important distinguishing feature of the J202_D26Z transistor is its small size and flexibility. It is designed to provide a low-noise, high-current power source in surface-mount packaging and is ideal for use in applications such as automotive, medical, and consumer applications. This makes it well suited for applications that require ultra-low-noise power sources, such as high-definition audio applications. The J202_D26Z transistor is also well suited for low-power audio and RF signal applications, such as cellular phones, pagers, and GPS receivers.

The J202_D26Z transistor has a peak drain current of 2.0A at a voltage of 25V and a peak gate voltage of 12V. It has a typical transconductance of 730mS and a gate capacitance of 45pF. The junction temperature of the transistor is 175°C. The operating temperature range for the device is -55°C to 175°C.

The J202_D26Z transistor is a voltage-controlled device. The gate voltage determines the resistance between the source and drain, thus controlling the flow of current through the channel. This makes it ideal for use in applications where a low-noise, high-current source is required. It is also useful in applications where a small size and flexibility are important, such as automotive, medical, and consumer electronics. As a result, the J202_D26Z transistor is well suited for a variety of applications, including high-definition audio and low-power audio and RF signal applications.

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