Allicdata Part #: | J202_D27Z-ND |
Manufacturer Part#: |
J202_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 40V 0.625W TO92 |
More Detail: | JFET N-Channel 40V 625mW Through Hole TO-92-3 |
DataSheet: | J202_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 900µA @ 20V |
Voltage - Cutoff (VGS off) @ Id: | 800mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 625mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J202 |
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A J202_D27Z transistor is a three-terminal device that is used in electronic circuits and systems to control the flow of electrical energy from one part of a circuit to another. The J202_D27Z is a Junction Field-Effect Transistor (JFET). It is the most common type of insulated-gate Field-Effect Transistor (FET).
A JFET is a semiconductor device that is usually either an n-channel or p-channel FET. It is used in many applications including amplifiers, switches, and voltage regulators. The basic structure of the JFET is a series of etched layers of semiconductor material. The two most common materials are silicon and gallium arsenide. The layers are typically formed on an insulator such as silicon dioxide or germanium oxide. The electrical properties of the layers are carefully controlled to ensure that they act as an insulator, a conductor, or both simultaneously. The three terminals of the JFET are the gate, the drain, and the source. The gate is the control terminal, the drain is the output terminal, and the source is the input terminal.
The structure of the J202_D27Z transistor has two parts: an insulated gate that is controlled by the electric field, and a source drain junction. The insulated gate provides a conductive path between the gate and the source. The source drain junction is a reverse-biased p-n junction that stops current from flowing from the drain to the source when there is no voltage applied to the gate. The insulated gate creates a depletion region in between the source and drain terminals. This depletion region increases in size as the voltage on the gate increases, causing a decrease in the current flowing from the source to the drain. The current flowing from the drain to the source is reduced when the gate voltage is reduced to zero. This is how the J202_D27Z transistor works to regulate the current flow.
The J202_D27Z transistor is widely used in a variety of applications because of its relatively low cost, low power consumption, and high current transfer capability. It is commonly used in amplifiers, digital circuits, and some linear circuits. The J202_D27Z can also be used in switches, voltage regulators, power supplies, and power amplifiers. In addition, it is often used as an adjustable current limiter and as a buffer between stages in an amplifier. Furthermore, it is used in the manufacturing of various electronic components and equipment such as calculators, computers, and telecommunications devices.
The J202_D27Z transistor is a versatile device that can be used in many applications. It is relatively easy to use and has a low cost. In addition, it has a wide range of current transfer capabilities, which makes it suitable for a wide variety of applications. As such, the J202_D27Z is a popular choice for projects requiring a high degree of current control.
The specific data is subject to PDF, and the above content is for reference
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