Allicdata Part #: | JANTX1N4481US.TR-ND |
Manufacturer Part#: |
JANTX1N4481US.TR |
Price: | $ 8.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Semtech Corporation |
Short Description: | 47V ZENER 1.5W |
More Detail: | Zener Diode |
DataSheet: | JANTX1N4481US.TR Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 7.60788 |
Specifications
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Description
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Diodes - Zener - SingleThe JANTX1N4481US.TR is a single Zener diode designed for applications requiring high reliability, low leakage, and voltage from 19 to 200 volts. It is composed of a semiconductor chip surrounded by an epoxy package that is attached to a printed circuit board (PCB).A Zener diode is an electronic component that is commonly used in many types of applications. In simple terms, it is used to maintain a stable output voltage even when the input voltage fluctuates. This is done by ensuring that a reverse voltage is applied across the Zener diode, which causes a breakdown of the junction between the N-type and P-type semiconductor regions. This breakdown causes electrons to flow across the junction and to the output, which creates a regulated voltage output.The JANTX1N4481US.TR is designed for applications where extra reliability and low leakage is needed. It utilizes a low bipolar leakage of <1000 pA and a breakdown voltage range of 19 to 200 volts. This wide range of breakdown voltage allows the device to be used in a variety of applications, such as automotive and industrial systems.The device is constructed of an N-type layer and a P-type layer that are separated by an insulating layer of silicon dioxide. This silicon dioxide layer provides a consistent breakdown voltage, which is necessary for reliable performance. The N-type layer is integrated into the anode, while the P-type layer is integrated into the cathode.The breakdown voltage of the JANTX1N4481US.TR is determined by a variety of factors, including the doping concentration of the semiconductor material, the size of the semiconductor chip, and the thickness of the silicon dioxide layer. As the breakdown voltage increases, the current that can be safely drawn from the device increases. This allows the device to be used in high power applications.The device is also designed to provide very low forward voltage drops when operating in avalanche mode. This is important in applications where energy efficiency is key, such as in mp3 players, portable chargers, and LED drivers. In addition, the device is designed to provide excellent noise protection, which is important in audio systems, RF receivers, and high-frequency switching.In summary, the JANTX1N4481US.TR is a single Zener diode designed for applications requiring high reliability, low leakage, and voltage from 19 to 200 volts. It is composed of a semiconductor chip surrounded by an epoxy package that is attached to a printed circuit board (PCB), and provides a consistent breakdown voltage for reliable operation. The device is designed to provide very low forward voltage drops when operating in avalanche mode, as well as excellent noise protection. This makes the JANTX1N4481US.TR an ideal choice for a wide variety of applications, such as automotive and industrial systems, audio systems, RF receivers, and high-frequency switching.The specific data is subject to PDF, and the above content is for reference
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