JANTX1N6141A Allicdata Electronics

JANTX1N6141A Circuit Protection

Allicdata Part #:

1086-2585-ND

Manufacturer Part#:

JANTX1N6141A

Price: $ 26.31
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 6.9V 13.4V C AXIAL
More Detail: N/A
DataSheet: JANTX1N6141A datasheetJANTX1N6141A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 23.90850
Stock 1000Can Ship Immediately
$ 26.31
Specifications
Voltage - Clamping (Max) @ Ipp: 13.4V
Supplier Device Package: C, Axial
Package / Case: G, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 111.9A
Series: Military, MIL-PRF-19500/516
Voltage - Breakdown (Min): 8.65V
Voltage - Reverse Standoff (Typ): 6.9V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (Transient Voltage Suppressors) diodes provide protection against damaging voltage transients resulting from electrical and electrostatic discharge events, and are designed to protect components from ESD (Electro-Static Discharge) and lightning. One such TVS diode a JANTX1N6141A which is designed specifically for use in IEC certified personal computers.

As an unidirectional device, the JANTX1N6141A has an integrated Cell-FET (Field Effect Transistor) structure with an integrated 4-layer avalanche diode pair fabricated in the same package so that it can provide electrical protection in multichip modules and against both ESD and EMI noise. It also contains internal positive temperature coefficient (PTC) resistors to stabilize the voltage during surge conditions.

When voltage is applied to the JANTX1N6141A a current flows through the Cell-FET, creating a voltage drop across the PTC. This voltage drop is used to activate the avalanche diode, which causes an additional voltage drop as the diode conducts its load current. The combined total voltage drop across the Cell-FET and avalanche diode is the breakdown voltage, which is typically around 18 V for the JANTX1N6141A.

The JANTX1N6141A is suitable for applications such as IEC certified computers and process control systems as it can provide up to 6 kV of protection against ESD events, along with EMI/RFI noise suppression. It is also suitable for high voltage protection up to 1.5 kV due to its double sided shielding, and is capable of withstanding EOS (Electrical Overstress) events up to a peak current of 2A.

In addition to its use in IEC certified computers, the JANTX1N6141A is also used in a wide range of other applications. It is useful for protecting RF circuits, such as radio transceivers or wireless modems, from voltage transients resulting from ESD. It can also be used for preventing voltage transients due to power surges, making it an effective protection device for various AC/DC and DC/DC switching power supplies.

To summarize, the JANTX1N6141A is an excellent IEC certified transient voltage suppressors (TVS) Diode that has an integrated Cell-FET, 4-layer avalanche diode pair, and internal PTC resistor, making it suitable for a variety of applications including protection against ESD, EMI noise, and power surge. It also offers high voltage protection up to 1.5 kV and EOS protection up to a peak current of 2A.

The specific data is subject to PDF, and the above content is for reference

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