| Allicdata Part #: | 1657-1123-ND |
| Manufacturer Part#: |
JANTX1N755A-1 |
| Price: | $ 3.88 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | M/A-Com Technology Solutions |
| Short Description: | DIODE ZENER 7.5V 500MW DO35 |
| More Detail: | Zener Diode 7.5V 500mW ±5% Through Hole DO-35 (DO-... |
| DataSheet: | JANTX1N755A-1 Datasheet/PDF |
| Quantity: | 264 |
| 1 +: | $ 3.52170 |
| 10 +: | $ 3.14244 |
| 100 +: | $ 2.57657 |
| 500 +: | $ 2.08637 |
| 1000 +: | $ 1.75959 |
| Series: | Military, MIL-PRF-19500/127 |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 7.5V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 6 Ohms |
| Current - Reverse Leakage @ Vr: | 2µA @ 5V |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 (DO-204AH) |
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The JANTX1N755A-1 is a single Zener diode which can be used as a voltage regulator, clamping device, or peak limiter in a variety of commercial, industrial, and consumer applications. This diode has a voltage rating of 7.5V and a power dissipation of 500 mW. Its maximum forward voltage is 0.6V and its peak pulse current is 5 A. The JANTX1N755A-1 has a standard package size of 2-pin SOT-23 and is Pb-free., RoHS compliant. This diode is also UL certified.
The JANTX1N755A-1 can be used in a variety of applications such as laptop computers, mobile phones, DC-DC converters, and automotive applications. Its regulation capability ensures compatibility with different input voltages, from high-voltage DC power sources to low-voltage AC power sources. Its peak current capability also makes it suitable for protecting against high-current surge pulses. The JANTX1N755A-1 is also useful for providing precise voltage for µ-controllers and other digital circuits. This diode is especially useful for precision voltage regulation applications due to its high accuracy and low temperature coefficient of 500 ppm/°C.
The working principle of the JANTX1N755A-1 is based on the Zener breakdown effect. The Zener breakdown effect occurs when the reverse bias voltage applied across the diode is greater than the Zener voltage, which is the diode’s rated voltage. As the reverse bias voltage increases, the electric field strength in the depletion region of the diode increases as well. When the electric field strength exceeds the dielectric strength of the depletion region, the gap between the p-n junction is broken down, allowing the diode to conduct both current and voltage in the reverse direction. The voltage across the diode is then clamped to the Zener voltage, thus providing precise voltage regulation.
In conclusion, the JANTX1N755A-1 is a single Zener diode which can be used for a variety of applications. Its regulation capability, peak current capability, and low reverse leakage make it suitable for precision voltage regulation applications. Its working principle is based on the Zener breakdown effect in which the voltage across the diode is clamped to the Zener voltage.
The specific data is subject to PDF, and the above content is for reference
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JANTX1N755A-1 Datasheet/PDF