JANTX2N2904AL Allicdata Electronics
Allicdata Part #:

1086-20750-ND

Manufacturer Part#:

JANTX2N2904AL

Price: $ 11.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 60V 0.6A TO5
More Detail: Bipolar (BJT) Transistor PNP 60V 600mA 800mW Thro...
DataSheet: JANTX2N2904AL datasheetJANTX2N2904AL Datasheet/PDF
Quantity: 1000
100 +: $ 10.09950
Stock 1000Can Ship Immediately
$ 11.11
Specifications
Series: Military, MIL-PRF-19500/290
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 800mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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The JANTX2N2904AL is a single transistor and a bipolar junction (BJT) type transistor. It is a two in one package consisting of two diodes, a base resistor and three metal oxide semiconductor elements. This transistor has a wide range of applications, such as RF amplifiers, oscillators, power circuits, audio amplifiers, switching power supplies, medical equipment, and other general-purpose applications.

The JANTX2N2904AL is capable of operating at a maximum voltage of 45v and a maximum current of 600mA. It has an overall power dissipation of up to 2W. It has a low on resistance of 4.4ohm and an off resistance of 4.4kohm, which makes it suitable for various power applications. Additionally, this transistor has an excellent temperature stability, with a maximum operating temperature of 150°C. The JANTX2N2904AL also offers a good quality performance, with a minimum gain bandwidth of 1.3GHz and a minimum current gain of 10.

The working principle of the JANTX2N2904AL is similar to that of other BJT transistors. It consists of three zones - the emitter, base, and collector. The emitter is the active region where electrons are released, the base area is where these electrons are collected and the collector is the output zone. The movement of electrons between these three regions can be regulated with the base voltage, enabling the transistor to gain control over the current flow between the emitter and the collector.

When the base voltage is increased, the current flow between the emitter and the collector is also increased, thus increasing the output power of the transistor. This makes the JANTX2N2904AL an ideal device for switching power supplies and audio amplifiers, as it can provide high output power with a low base voltage. Additionally, this transistor can operate at high frequencies, making it suitable for applications such as oscillators and RF amplifiers. The JANTX2N2904AL can also be used for general-purpose applications such as medical equipment and communication systems.

The JANTX2N2904AL is widely used in today\'s electronic devices, due to its excellent quality, performance and reliability. It has good thermal stability, high frequency, low noise and low power dissipation making it an ideal choice for many devices. Additionally, the JANTX2N2904AL is available in several package types such as TO-220, SMD and DIP, making it highly versatile.

In conclusion, the JANTX2N2904AL is a high-performance and reliable single BJT transistor. It has a wide range of applications, such as RF amplifiers, oscillators, power circuits, audio amplifiers, switching power supplies, medical equipment, and other general-purpose applications. The JANTX2N2904AL has excellent performance, with a low on resistance, high current gain, and high maximum operating temperature. Additionally, this transistor is available in several package options, making it versatile and suitable for many applications. Therefore, the JANTX2N2904AL is an ideal choice for today\'s electronic devices.

The specific data is subject to PDF, and the above content is for reference

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