| Allicdata Part #: | 1086-20842-ND |
| Manufacturer Part#: |
JANTX2N3506AL |
| Price: | $ 12.84 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 40V 3A TO5 |
| More Detail: | Bipolar (BJT) Transistor NPN 40V 3A 1W Through Ho... |
| DataSheet: | JANTX2N3506AL Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 11.67610 |
| Series: | Military, MIL-PRF-19500/349 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 40V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 250mA, 2.5A |
| Current - Collector Cutoff (Max): | -- |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 1.5A, 2V |
| Power - Max: | 1W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package: | TO-5 |
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/* HTML output */JANTX2N3506AL is a type of transistor in the family of BJT( Bipolar Junction Transistor) and it belongs to the single class. The transistor is an active device, often consisting of three terminals. It can be used for a number of applications depending on the current requirements and voltage rating. A BJT can be used to amplify a small signal over a larger range or circuit. This transistor has a maximum power rating of 10W and a breakdown voltage rating of 600V.
The primary application of JANTX2N3506AL transistor is in amplifier circuits. It has a high gain and high input current capability, allowing it to be used for amplifying signals with low distortion. It is also used for voltage regulation and to switch power quickly in switching power supplies and other power converters. Additionally, this transistor can be used in linear, analog, digital and radio frequency (RF) circuits.
The working principle of the JANTX2N3506AL transistor is based upon the base current flow control. This transistor has three terminals: the emitter, base and collector. The emitter is the negative terminal and the base and collector terminals are the two positive terminals. When voltage is applied to these two positive terminals, the electrons are attracted to the base terminal, thus increasing its current. This increased current at the base terminal turns the transistor on, allowing current to flow from the collector terminal to the emitter terminals.
The amount of current flowing through this transistor is proportional to the amount of base current. The total current flow is equal to the collector current minus the emitter current. This difference is proportional to the voltage applied to the base terminal and is known as the collector-emitter current. This current can be used for amplification, switching and regulation, depending on the requirements.
The JANTX2N3506AL has a high reverse breakdown voltage which makes it suitable for use in high power circuit designs. It is constructed using a silicon epitaxial planar structure and features a low current gain and a high common emitter current gain. The forward voltage drop ensures that the transistor can be used in a wide range of circuits and applications.
JANTX2N3506AL is a versatile transistor which is primarily used for amplifier stages and can also be used for voltage regulation and switching applications. The three-terminal device works on the principle of base current control, allowing current flow from collector to emitter. The transistor also has a high reverse breakdown voltage, low current gain and high common emitter current gain which makes it suitable for high power applications.
The specific data is subject to PDF, and the above content is for reference
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JANTX2N3506AL Datasheet/PDF