JANTX2N3637L Allicdata Electronics
Allicdata Part #:

1086-20893-ND

Manufacturer Part#:

JANTX2N3637L

Price: $ 12.72
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 175V 1A
More Detail: Bipolar (BJT) Transistor PNP 175V 1A 1W Through H...
DataSheet: JANTX2N3637L datasheetJANTX2N3637L Datasheet/PDF
Quantity: 1000
100 +: $ 11.56160
Stock 1000Can Ship Immediately
$ 12.72
Specifications
Series: Military, MIL-PRF-19500/357
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 175V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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The JANTX2N3637L is a high-frequency NPN bipolar junction transistor (BJT) that is built for use in RF applications. It has an effective frequency range of up to 3GHz, making it suitable for a wide variety of communication applications. The transistor has a relatively high collector-to-emitter breakdown voltage, which makes it well-suited for a wide range of input/output matching networks. The JANTX2N3637L was designed to meet the demands of high-speed amplitude modulation schemes and is capable of handling large signals with minimal distortion.

The basic working principle of a bipolar transistor is the same for both NPN and PNP transistors. At its simplest level, a bipolar transistor consists of two diodes connected back-to-back. When subjected to a suitable base-emitter voltage, the diodes create a current flow between the collector and emitter. This current flow is then able to amplify a signal depending on how it is biased. The amount of current flow increases or decreases the collector-emitter voltage, which in turn controls the amount of gain or loss of signal.

In the case of the JANTX2N3637L, the gain of the transistor is set by the collector-emitter voltage and is typically expressed in decibels (dB). The JANTX2N3637L offers ideal RF performance, with a maximum gain of 16dB at 0.5GHz. This gain is quite high for a bipolar transistor and is ideal for RF applications where high signal to noise ratio (SNR) is needed. The gain of the JANTX2N3637L increases with frequency, allowing it to be used in a variety of high-frequency amplifier and oscillator circuits.

The JANTX2N3637L is also designed to have a very fast turn-on time and is capable of switching frequencies of up to 15GHz. This makes it suitable for applications such as cellular base transceivers and mobile telephones, where a high-frequency switching speed is often necessary. In addition, the transistor’s transition frequency, fT, can reach as high as 4GHz, offering excellent low-noise performance. The combination of these features makes the JANTX2N3637L an ideal choice for RF applications.

The JANTX2N3637L is a versatile and reliable RF transistor that offers outstanding performance across a wide range of frequencies. Its high gain and fast switching capabilities make it suitable for many applications, including cellular base transceivers, mobile telephones, and high-frequency amplifiers and oscillators. As a result, the JANTX2N3637L is an ideal choice for anyone looking for a high-performance RF transistor.

The specific data is subject to PDF, and the above content is for reference

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