| Allicdata Part #: | 1086-2709-ND |
| Manufacturer Part#: |
JANTX2N3810 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS 2PNP 60V 0.05A TO78 |
| More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50... |
| DataSheet: | JANTX2N3810 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | Military, MIL-PRF-19500/336 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | 2 PNP (Dual) |
| Current - Collector (Ic) (Max): | 50mA |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 1mA, 5V |
| Power - Max: | 350mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-78-6 Metal Can |
| Supplier Device Package: | TO-78-6 |
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The JANTX2N3810 is a high-performance complementary multi-emitter vertical NPN transistor array. This device consists of two pairs of NPN transistors in a single package, with each pair individually emitter-connected in a common-base configuration. The central feature of this device is its vertical construction, which minimizes the signal transit time between the pair of transistors and provides a better signal isolation performance than is achievable with conventional lateral arrays. Since the two pairs of transistors share a common base, it also offers better current gain characteristics than discrete transistors. The JANTX2N3810 is an excellent choice for applications in which signal and noise isolation, as well as high gain and speed, is a priority.
The JANTX2N3810 is well-suited for high-speed switching, power amplifiers, power supplies, and other applications in which reliable signal isolation and high gain at frequencies up to 10 MHz are required. The device features a wide range of switching frequencies, low voltage operation, high current drive capability, low standby current, and low noise. The device is rated for operation at up to 75°C and is protected against damage from electrostatic discharges up to 2000 V. Additionally, the device is available in both through-hole and surface mount packages.
The working principle of the JANTX2N3810 is relatively simple. It consists of two pairs of NPN transistors, each pair individually emitter-connected in a common-base configuration. When a positive voltage is applied across the emitter and base of each pair of transistors, a current flow is initiated. This current flow then causes a second pair of transistors to begin to conduct, thus completing the circuit. As the current increases, the voltage rises and the switching sequence is reversed, causing the second pair of transistors to absorb the excess current and the cycle to repeat. The major benefit of this arrangement is its high-speed, low-voltage operation, which is ideal for a wide range of switching and power amplifying applications.
In summary, the JANTX2N3810 is an excellent choice for applications which require high-speed signal and noise isolation, as well as high gain at frequencies up to 10 MHz. The device is widely available in through-hole and surface mount packages, and is protected against damage from electrostatic discharges up to 2000 V. Furthermore, the device has low standby current and low noise, making it an ideal choice for a range of power amplifying and switching applications.
The specific data is subject to PDF, and the above content is for reference
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JANTX2N3810 Datasheet/PDF