Allicdata Part #: | 1086-16149-ND |
Manufacturer Part#: |
JANTX2N5416U4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 300V 1A |
More Detail: | Bipolar (BJT) Transistor PNP 300V 1A 1W Surface M... |
DataSheet: | JANTX2N5416U4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/485 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | U4 |
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The JANTX2N5416U4 is a N-Channel 3 Watt MOSFET produced by Microsemi. It is a type of discrete semiconductor that operates as a switch, allowing electric current to flow between two terminals when a sufficient gate voltage is applied. It is typically used in low voltage, low-power analog and digital circuits.
This particular device is a general-purpose MOSFET designed for industrial and commercial applications. It has a very low on-resistance, a forward-biased breakdown voltage of 15 volts and an on-state current of up to 4.5 amperes. Its on-resistance is 11 Ohms, and its peak "off" leakage current is only 5 microamps. It is also ESD and electrical transient protected.
In terms of its application field and working principle, JANTX2N5416U4 MOSFET is commonly used as a switch in industrial, commercial and consumer electronic circuits, such as power supplies, DC motors, air conditioners and telecom systems. This type of power transistor is normally opened when the voltage applied to its Gate terminal is low, and it connects and closes the circuit when the voltage applied to the Gate is increased. This MOSFET acts as an electronically opened or closed switch and can control the operation of a circuit.
This type of MOSFET has a very low on-resistance and peak “off” leakage current which is why it is suitable for most low voltage, low-power circuits, such as switching applications. It is also robust, able to handle high-power situations, and suitable for heavy load current environments. Its low on-resistance and forward-biased breakdown voltage make it an excellent choice for switching applications and applications requiring high-efficiency power regulation.
Another advantage of the JANTX2N5416U4 MOSFET is that it has built-in protection from ESD and electrical transients, so that it can safely be used in more sensitive electronic designs. This makes it an ideal choice for many high-reliability and industrial applications, as it can provide reliable power and control.
In conclusion, the JANTX2N5416U4 is an excellent choice for many applications, including those that require low voltage and low-power operation, or robust high-power operation, and those that need reliable protection against ESD or electrical transients. With its low on-resistance, forward-biased breakdown voltage, and built-in protection against ESD and electrical transients, the JANTX2N5416U4 is an ideal choice for many industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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