| Allicdata Part #: | 1086-17628-ND |
| Manufacturer Part#: |
JANTXV1N4372DUR-1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 3V 500MW DO213AA |
| More Detail: | Zener Diode 3V 500mW ±1% Surface Mount DO-213AA |
| DataSheet: | JANTXV1N4372DUR-1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | Military, MIL-PRF-19500/435 |
| Packaging: | Bulk |
| Part Status: | Discontinued at Digi-Key |
| Voltage - Zener (Nom) (Vz): | 3V |
| Tolerance: | ±1% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 29 Ohms |
| Current - Reverse Leakage @ Vr: | 30µA @ 1V |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-213AA (Glass) |
| Supplier Device Package: | DO-213AA |
Description
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Introduction
JANTXV1N4372DUR-1 is a Zener diode intended for the protection, regulation, and switching applications in various industries. The device features a reverse voltage breakdown voltage (Vz) of at least 4.7V at an operating temperature of -65°C to 125°C. It is available in a standard DO-41 package.Features and Benefits
JANTXV1N4372DUR-1 has several features and benefits due to its design. The device has a low current leakage rate and is capable of handling large transient currents in excess of 175A. Furthermore, the device has a low power dissipation rate and is also capable of handling large transient voltages up to 500V. Additionally, the device has a high temperature stability, allowing for operation in higher temperatures than other similar devices.Application Fields
JANTXV1N4372DUR-1 can be used in a variety of fields, such as the protection, regulation, and switching applications in the following areas:- Automotive.
- Industrial equipment.
- Consumer electronics.
- Power converters.
Working Principle
JANTXV1N4372DUR-1 operates on a reverse voltage breakdown principle, where the reverse voltage is increased until the device begins to break down, allowing current to pass through it. This is due to the depletion of charge carriers from the P-N junction. Once the breakdown voltage is reached, the current flow through the device is regulated, ensuring a stable power output. Furthermore, the device has an internal resistance, or dynamic impedance, which helps protect the device from high transient voltages by providing a voltage clamp, thereby limiting the current to a safe level.Conclusion
JANTXV1N4372DUR-1 is a Zener diode intended for the protection, regulation, and switching applications in various industries. The device operates on a reverse voltage breakdown principle and features a low current leakage rate and a low power dissipation rate. Additionally, it has a high temperature stability, enabling its use in higher temperatures than other similar devices. It is available in a standard DO-41 package and can be used in a variety of application fields, making it an excellent choice for various applications.The specific data is subject to PDF, and the above content is for reference
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JANTXV1N4372DUR-1 Datasheet/PDF