JANTXV1N647-1 Allicdata Electronics
Allicdata Part #:

1086-15977-ND

Manufacturer Part#:

JANTXV1N647-1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 400V 400MA DO35
More Detail: Diode Standard 400V 400mA Through Hole DO-35
DataSheet: JANTXV1N647-1 datasheetJANTXV1N647-1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/240
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50nA @ 400V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Description

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A semiconductor diode, such as the JANTXV1N647-1, is a diode which is used as a rectifier. A rectifier is an electric device which converts alternating current (AC) to direct current (DC). The device is able to block current flow in one direction while allowing current through it in the opposite direction. This makes it great for applications such as voltage regulation, rectification, signal processing, and other types of power conversion. Since diodes are relatively simple and inexpensive components, they are commonly found in consumer electronics, power supplies, and other consumer products.

The JANTXV1N647-1 is a single rectifier which is designed for high current and high power applications. The device is capable of handling up to 40A at temperatures up to 175°C. It has a maximum voltage rating of 400V and a forward voltage drop (Vf) of 1.53V @ 40A. The device is also rated for a junction temperature of 175°C and has been tested for surge current capability. In addition, it is capable of withstanding peak reverse and forward current conditions of 25A and 50A respectively.

The working principle of the JANTXV1N647-1 is relatively simple. The device consists of two layers of semiconductor material, each with a different type of conductivity. The layer of material with a positive charge is called the anode and the layer with a negative charge is called the cathode. When a voltage is applied across the terminals of the device, the electrons from the anode are attracted to the cathode, creating an electric current. This current can either be blocked (by changing the polarity of the voltage) or allowed to flow by keeping the polarity the same.

The primary application of the JANTXV1N647-1 is in power conversion. The device has been designed to be used in power supplies, DC-DC converters, and other high power applications. It is also suitable for use in automotive, telecommunications, and industrial applications. Additionally, the device is also well suited for applications such as high-efficiency rectification, voltage clamping, and signal filtering.

In conclusion, the JANTXV1N647-1 is a single rectifier which is designed for high current and high power applications. It offers a maximum voltage rating of 400V, a forward voltage drop of 1.53V @ 40A, and a junction temperature rating of 175°C. These features make it well suited for applications such as power conversion, rectification, voltage regulation, and signal processing.

The specific data is subject to PDF, and the above content is for reference

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