JANTXV1N6625U Allicdata Electronics
Allicdata Part #:

1086-19976-ND

Manufacturer Part#:

JANTXV1N6625U

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 1KV 1A A-MELF
More Detail: Diode Standard 1000V 1A Surface Mount D-5A
DataSheet: JANTXV1N6625U datasheetJANTXV1N6625U Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/585
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Description

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Diodes - Rectifiers - Single

JANTXV1N6625U is a high performance silicon rectifier diode used for a wide range of applications. It is a single, low noise, low dropout, low on-state voltage, low forward voltage, low capacitance, and low power dissipation diode that is used for a variety of purposes, from rectification to switching applications. This diode is ideal for a wide range of products, including power supplies, power conversion, and other applications where fast and low noise switching is required.

Application Fields

The JANTXV1N6625U can be used across a wide range of applications, such as:

  • AC/DC Power Supplies
  • Switching Power Supplies
  • regulated and unregulated DC/DC Converters
  • High Efficiency DC/DC Converters
  • DC/DC Controllers
  • Load Regulation and Free-Wheeling Diodes
  • Battery Backup and Management Systems
  • Charge Pumps
  • Reverse Battery Protection
  • Solar Panel Charge Controllers
  • Regulated Variable Voltage Power Supplies
  • DC/DC Power Supply Circuits for Automotive and Telecom
  • Over/Under voltage protection circuits

Working Principle

The JANTXV1N6625U diode is an active diode, which means it has a negative temperature coefficient. This means that, when the diode temperature increases, its forward voltage decreases. This is beneficial in many applications, as it helps to reduce any power losses due to the diode’s on-state resistance and off-state capacitance. The device operates at an average forward voltage of 1.25V-2.2V, with a reverse current of 5mA at 86°C and 100mA at 25°C.

In addition to this, the diode also features low reverse recovery time, due to its unique design which utilizes a low thermal resistance structure, allowing for low reverse recovery time even at high diode currents. This helps to reduce the power dissipation and EMI (electromagnetic interference). The diode also features low capacitance, resulting in less switching loss and faster switching speed, meaning it is ideal for high-speed switching applications. The device can operate in temperatures ranging from -65°C to 175°C.

Conclusion

Overall, the JANTXV1N6625U diode is a great choice for a wide range of applications due to its high performance parameters. It features low forward voltage, low dropout voltage, low power dissipation, low on-state resistance, and low capacitance. It also has excellent temperature coefficient and reverse recovery time properties, allowing it to be used in high-speed switching applications. The device can be used in applications ranging from power conversion to solar panel charge controllers, making it a very versatile and useful device.

The specific data is subject to PDF, and the above content is for reference

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