JANTXV1N6761UR-1

Series:	Military, MIL-PRF-19500/586
Packaging:	Bulk
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	380mV @ 100mA
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	100µA @ 100V
Capacitance @ Vr, F:	70pF @ 5V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-213AB, MELF (Glass)
Supplier Device Package:	DO-213AB (MELF, LL41)
Operating Temperature - Junction:	-65°C ~ 150°C

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Introduction

JANTXV1N6761UR-1 is a single rectifier diode that features a reverse Avalanche current characteristically of 1.1 A at a junction temperature of +125°C and forward-to-reverse breakdown voltage of 1900V. It is long creepage, long stand-off device that is capable of dissipating a power dissipation of 1.5W at a maximum junction temperature of +175°C with a reverse peak voltage of 6kV. With high surge capability and superior performance, this diode is used in a variety of applications such as PIN diode/photodetector circuits, switching circuits, motor drives, etc.

Application Field of JANTXV1N6761UR-1

JANTXV1N6761UR-1 diodes are primarily used for the rectification of high frequency and high voltage applications. They are ideal for use in switching power supplies, DC-DC converters, core-discharge applications and high power switching applications. The device is also used in automotive and industrial applications such as electronic power outlets, television power supplies, and motor controller applications. JANTXV1N6761UR-1 can also be used in photodetector circuits and other electronic sensing devices. Its high reverse breakdown voltage makes it an ideal choice for optical sensing applications including photodiode and photocell circuits. The device is also used in touch-sensitive applications, allowing input devices to detect the finger’s pressure and position.

Working Principle of JANTXV1N6761UR-1

The JANTXV1N6761UR-1 diode is a single rectifying diode that utilizes the principles of rectification to convert alternating current (AC) signals into direct current (DC) signals. It consists of two “P” and “N” type materials, situated on opposite sides of a single semiconductor junction, which have been heavily doped to increase their electrical conductivity.When current is passed through the device in the forward direction, the P-type material absorbs positive charge carriers (holes) and the N-type material absorbs negative charge carriers (electrons), creating a potential barrier across the junction. This prevents current from passing in the reverse direction. However, when the voltage of the AC signal exceeds the barrier voltage, electrons are launched across the junction and current can flow in both directions.The reverse Avalanche current of the device is determined by the doping levels of the N and P-type materials and the voltage of the reverse biased diode. As the voltage increases, the current through the diode will also increase, resulting in a larger reverse Avalanche current. The forward voltage drop is determined by the number of charge carriers and their respective charges.

Conclusion

In conclusion, JANTXV1N6761UR-1 is a single rectifying diode that utilizes the principles of rectification for high-frequency and high-voltage applications. It has a high reverse breakdown voltage, making it ideal for use in applications such as switching power supplies, DC-DC converters, core-discharge applications, motor drives, photodetector circuits, and touch-sensitive input devices. Its high surge capability and superior performance make it perfect for a variety of electronic applications.

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