| Allicdata Part #: | 1086-21054-ND |
| Manufacturer Part#: |
JANTXV2N5416S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS PNP 300V 1A TO-39 |
| More Detail: | Bipolar (BJT) Transistor PNP 300V 1A 750mW Throug... |
| DataSheet: | JANTXV2N5416S Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | Military, MIL-PRF-19500/485 |
| Packaging: | Bulk |
| Part Status: | Discontinued at Digi-Key |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 300V |
| Vce Saturation (Max) @ Ib, Ic: | 2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max): | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 10V |
| Power - Max: | 750mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package: | TO-39 (TO-205AD) |
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The JANTXV2N5416S is a small signal PNP Bipolar Junction Transistor (BJT) of the ‘S’ variety, optimized for low noise and high-frequency operation. It is a Planar epitaxially grown device, making it a very attractive choice for a variety of electronic systems. The JANTXV2N5416S is classified as a single transistor, specifically an NPN-type BJT. Its high gain, low power consumption, and small form factor make it a great choice for applications requiring high-performance with minimal size or weight constraints.
The main application for the JANTXV2N5416S is low-noise, high-frequency amplification. It is capable of operating at frequencies as high as 50MHz, with a minimum of noise. Due to its low noise characteristics, it is often used as an amplifier in circuits requiring audio or video signals at higher frequencies, providing a high-quality output signal without any distortion or unwanted noise. Additionally, the low power consumption of the JANTXV2N5416S makes it an ideal choice for applications where low power-consumption and efficient performance is critical.
The working principle of the JANTXV2N5416S involves two main components, the base and collector. When a small current is applied to the base, it will cause a larger current to flow from the collector to the emitter. As a result, the voltage drop across the collector-emitter will increase, allowing for amplification of the input signal. The ratio of the input current to the output current is known as the gain of the transistor, and for the JANTXV2N5416S this has been optimized for low-noise, high-frequency applications.
The JANTXV2N5416S can be integrated into electronic systems in a variety of ways, depending on the application requirements. It can be soldered directly to a printed circuit board, making it a good fit for digital circuits requiring very small sizes and fast response times. It can also be used together with other discrete components, such as capacitors and resistors, to build more complex systems or circuits. Additionally, it can be used in combination with integrated circuits for more specialized systems.
In conclusion, the JANTXV2N5416S is a small signal PNP Bipolar Junction Transistor (BJT) of the ‘S’ variety, designed for low noise and high-frequency operation. Its small form factor, low power-consumption, high gain, and high frequency-capable make it a great choice for a variety of applications, including low-noise, high-frequency amplification and sensor drives. Its working principle is based on the amplification of a small input current to a larger output current, allowing for increased sensitivity and improved signal-to-noise ratio. The JANTXV2N5416S\'s capabilities also make it an ideal choice for discrete and integrated circuit applications requiring advanced performance and efficient energy-consumption.
The specific data is subject to PDF, and the above content is for reference
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JANTXV2N5416S Datasheet/PDF