K2500EH70

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Thyristors are semiconductor devices made of four p-n junctions. They belong to a group of three-terminal devices called semiconductor controlled rectifier (SCR). DIACs, SIDACs, and K2500EH70 are all thyristors. K2500EH70 technology is particularly useful in many applications due to its high voltage and current capabilities. This article will look at the application field and working principle of K2500EH70 thyristor.

K2500EH70 thyristor is mainly used in high-power switching applications, such as motor control applications, in addition to switching power, controlling large wattage resistive, capacitive or inductive loads, and precision speed control of AC motor. It can be used in high-frequency applications, power supplies, frequency inverters, ups systems, inverters, and so on. It is also used for high voltage arc welding, for controlling lightning arresters, for transducer applications, and general wave shaping and rectification.

K2500EH70 thyristor works based on the principle of avalanche breakdown. In this process, when a high potential is applied to the gate and the main terminal, electrons from the n-side region of the main terminal drift towards the p-side gate terminal. This causes a buildup of electrons at the p-side gate junction and a corresponding depletion of electrons at the n-side. This disruption of normal current flow results in the formation of a narrow depletion region across the two junctions. The energy supplied by the applied voltages accelerates further electrons into the newly formed depletion region.

The avalanche breakdown increases exponentially with the size of the applied voltage; and when the voltage reaches a certain value, it enters the breakover region. As the voltage increases, the depletion region expands and current flows from the maint to the gate terminal. During this avalanche breakdown and breakover characteristic, the voltage decreases while the current increases. Once the breakover point is reached, the thyristor enters the conducting state.

Once the SCR enters the forward conducting state, the gate current no longer affects its operation. A reversed voltage applied between the main and gate terminals can not turn off the thyristor. The only way to turn off the thyristor device is to reduce the current below the latching current. This is done by an external circuit called the snubber circuit.

The snubber circuit limits the current flowing through the thyristor and the magnitude of the reverse voltage applied. When the magnitude of the applied voltage is below the triggering voltage of the device, the thyristor will turn off. By using this method, it is possible to turn off the SCR without the use of a gate signal.

In conclusion, K2500EH70 thyristors are useful for high power switching applications. The application areas include motor control, switching power, controlling large wattage resistive, capacitive or inductive loads, precision speed control of AC motors, and many others. The thyristor works based on the principle of avalanche breakdown. As the voltage increases, the depletion region expands and current flows from the main terminal to the gate terminal. Once the breakover point is reached, the thyristor enters the conducting state. In order to turn off the SCR, an external circuit called the snubber circuit limits the current flowing through the thyristor and the magnitude of the reversed voltage applied.

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