KGF6N05D-400 Allicdata Electronics
Allicdata Part #:

KGF6N05D-400-ND

Manufacturer Part#:

KGF6N05D-400

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America Inc.
Short Description: IC MOSFET N-CH
More Detail: Mosfet Array 2 N-Channel (Dual) Common Source 5.5V...
DataSheet: KGF6N05D-400 datasheetKGF6N05D-400 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Last Time Buy
FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Standard
Drain to Source Voltage (Vdss): 5.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 0.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 3.5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 5.5V
Power - Max: 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-UFLGA, CSP
Supplier Device Package: 20-WLCSP (2.48x1.17)
Description

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Introduction

KGF6N05D-400 is a power Mosfet Array. It is a power transistor with a built-in diode, used in power electronics applications such as motor drives, high-voltage DC to DC converters, and power supply circuits. The KGF6N05D-400 is a four-channel MOSFET array, with each MOSFET featuring a low on-resistance, low output capacitance, and low gate threshold voltage. It also offers excellent static and dynamic switching performance, providing high efficiency and reliability in various power electronics applications.

Application Field of the KGF6N05D-400

The KGF6N05D-400 is a power MOSFET array and is widely used in many power electronics applications, where it provides good performance, high efficiency, and reliability. Examples include switched-mode power supplies, DC-DC converters, motor drives and controllers, inverters, audio amplifiers, and automotive and industrial applications.

The KGF6N05D-400 offers low on-resistance and gate threshold voltage, which makes it ideal for high-frequency switching applications with low gate driving requirements. It also has low gate capacitance, which helps reduce the power dissipation of the system. Additionally, its static and dynamic switching performance is excellent, meaning it can be used in switching applications where fast turn-on and turn-off response times are necessary.

Working Principle of the KGF6N05D-400

The KGF6N05D-400 is a four-channel MOSFET array. It works by using the principle of metal oxide semiconductor field effect transistors (MOSFETs). A MOSFET consists of a substrate of n-type or p-type semiconductor material, onto which a number of electrodes (or "gates") have been placed. The substrate and the gates form an insulating layer between them. When a voltage is applied to the gates, it creates an electric field that modulates the conductivity of the substrate, allowing current to flow from one end of the substrate to the other.

In the KGF6N05D-400, the four MOSFET channels form an array, with each MOSFET being controlled by an individual gate. By applying a voltage to the gates, a current can be sent through the MOSFETs, which can then be used to control the voltage and current of the system. The MOSFETs in the KGF6N05D-400 are also protected from short-circuits and thermal overloads, making the device safer and more reliable in power electronics applications.

Conclusion

The KGF6N05D-400 is a power MOSFET array, used in a variety of power electronics applications for its excellent performance and high efficiency. It works by using the principle of metal oxide semiconductor field effect transistors (MOSFETs), which allow current to be switched on and off by applying a voltage to the gates. The KGF6N05D-400 also offers low on-resistance and gate threshold voltage, low static and dynamic switching performance, and has built-in protections to help ensure reliable performance.

The specific data is subject to PDF, and the above content is for reference

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