KSA812GAMTF Allicdata Electronics
Allicdata Part #:

KSA812GAMTF-ND

Manufacturer Part#:

KSA812GAMTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 50V 100mA 180MHz 150m...
DataSheet: KSA812GAMTF datasheetKSA812GAMTF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: KSA812
Description

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The KSA812GAMTF is a single-stage, NPN, epitaxial planar, medium power transistor. This device is designed for use as an amplifier and driver in audio, linear, and digital applications. With features such as low noise, high gain, and high output power, the KSA812GAMTF is suitable for a variety of different applications.

The KSA812GAMTF is featured by a wide range of current gain and collector-emitter breakdown voltage. The device is offered in two different packages, TO-220F and TO-207AD, depending on application requirements. The TO-220F package is recommended for audio and linear applications while the TO-207AD package is suitable for digital applications.

The KSA812GAMTF operates through a PN junction, which is responsible for its classic bipolar junction transistor characteristics. This device is able to control a large amount of current across its base, collector, and emitter terminals. When a voltage is applied to the base terminal, electrons are collected from the base and the current flows from the collector to the emitter.

In general, the KSA812GAMTF is an excellent choice for various low to medium power applications. It can be used in small signal amplification and as a driver for current or voltage sources that require low noise and high output power. It is also suitable for use in digital and high-frequency applications.

The KSA812GAMTF boasts a high frequency current gain and output power, as well as a low noise, making it a perfect choice for audio applications as well. The device has excellent temperature stability, making it also suitable for use in industrial control and home appliance applications.

The KSA812GAMTF features a low saturation voltage at high collector to emitter currents, which allows for excellent current switching capability. The device also has high input resistance, allowing for a high-impedance input stage with low capacitance and low voltage drop. This makes it an ideal choice for digital signal processing applications and power management circuits.

Overall, the KSA812GAMTF is a single-stage, NPN, planar bipolar junction transistor that provides a wide range of current gain and collector-emitter breakdown voltage. It is ideal for use in audio, linear, and digital applications, and offers excellent temperature stability and low noise. The device also boasts a low saturation voltage at high current, which is ideal for current switching and high-impedance input stages. The KSA812GAMTF has been designed to provide a reliable and cost-effective option for various power management and signal processing circuits.

The specific data is subject to PDF, and the above content is for reference

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