| Allicdata Part #: | KSA812GMTF-ND |
| Manufacturer Part#: |
KSA812GMTF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 50V 0.1A SOT-23 |
| More Detail: | Bipolar (BJT) Transistor PNP 50V 100mA 180MHz 150m... |
| DataSheet: | KSA812GMTF Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1mA, 6V |
| Power - Max: | 150mW |
| Frequency - Transition: | 180MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Base Part Number: | KSA812 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
KSA812GMTF is an NPN transistor designed for special purposes and applications, such as medical devices, industrial machinery and other mission-critical applications. The two main components that make up a transistor are the emitter and the collector. The emitter is responsible for converting DC current into an AC frequency, while the collector is then used to detect the signal. To function properly, the transistor must have a high current gain. KSA812GMTF is a high-gain transistor, ideal for applications in which a high current gain is desired. The KSA812GMTF has a maximum gain of 130 dB (decibels).
KSA812GMTFs are mainly found in two main types of applications: audio and RF. In audio applications, KSA812GMTFs can be used for amplifying signals and providing an amplified output. The transistor can also be used in RF applications, such as antenna designs and wireless systems, as it can provide significant signal gains. In these cases, KSA812GMTFs can be used to amplify low-level signals and increase the signal strength.
The working principle of KSA812GMTF transistors is based on their differential structure and the NPN configuration. The differential structure of the device makes it suitable for handling high frequency and large voltage swings. The NPN configuration enables the device to have a high current gain, and can therefore be used to amplify weak signals and boost the output. The current gain of the KSA812GMTF is also largely dependent on the size of the base, which can be adjusted for specific applications.
Overall, KSA812GMTF transistors are ideal for applications that require a high-gain device with significant signal gains. The device’s NPN configuration and differential structure make it well-suited for handling high frequencies and large voltage swings. Its current gain is adjustable, making it suitable for a wide range of applications. It is a reliable choice for mission-critical applications, such as medical and industrial machinery, as it is designed to meet the highest standards of reliability and performance.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| KSA812OMTF | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 50V 0.1A SOT-23... |
| KSA812YMTF | ON Semicondu... | -- | 1000 | TRANS PNP 50V 0.1A SOT23B... |
| KSA812LMTF | ON Semicondu... | -- | 1000 | TRANS PNP 50V 0.1A SOT-23... |
| KSA812GMTF | ON Semicondu... | -- | 1000 | TRANS PNP 50V 0.1A SOT-23... |
| KSA812GAMTF | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 50V 0.1A SOT-23... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...
KSA812GMTF Datasheet/PDF