Allicdata Part #: | KSB810YTA-ND |
Manufacturer Part#: |
KSB810YTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 25V 0.7A TO-92S |
More Detail: | Bipolar (BJT) Transistor PNP 25V 700mA 160MHz 350m... |
DataSheet: | KSB810YTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 700mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 70mA, 700mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 1V |
Power - Max: | 350mW |
Frequency - Transition: | 160MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
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KSB810YTA Application Field and Working Principle
The KSB810YTA is a high power NPN transistor manufactured by Shanghai Lunsure Electronics Co., Ltd, developed for audio and general purpose applications. It utilizes NPN structure for power amplification, switching and other applications.
Features
- High hFE linearity
- High power dissipation
- High gain linearity
- Low saturation voltage
- High current gain
- Low noise
- Low distortion
Applications
- Class AB audio amplifiers
- DC motor control
- Switching applications
- Irrigation systems
- LED lighting
- Smart home applications
Working Principle
The NPN transistor consists of three terminals, namely a base, an emitter, and a collector. It is used for amplifying or switching electronic signals. Due to its higher gain, NPN transistors are used in switching applications. When a small current arrives at the base terminal, it is then amplified at the collector terminal.
The sequence of events taking place inside an NPN transistor is that the base current causes the base-emitter junction to turn on, which, in turn, causes the large current to start flowing from the collector to the emitter. This large current flow is stabilized by the current gain of the NPN transistor. This gain is expressed by the current gain factor hFE, which represents the amplification of the current between the collector and the emitter.
The KSB810YTA has high hFE linearity and high current gain which makes it very effective in audio amplification, DC motor control, and other switching applications. Moreover, it has a low noise profile, low distortion, and low saturation voltage.
Conclusion
The KSB810YTA is a versatile NPN transistor with good properties required for low noise and high fidelity audio and motor control applications. It has a high current gain, low noise, and low distortion. It is suitable for switch mode power supplies, LED lighting, irrigation systems and other smart home applications.
The specific data is subject to PDF, and the above content is for reference
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