Allicdata Part #: | KSB834O-ND |
Manufacturer Part#: |
KSB834O |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 3A TO-220 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 3A 9MHz 1.5W Thro... |
DataSheet: | KSB834O Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 500mA, 5V |
Power - Max: | 1.5W |
Frequency - Transition: | 9MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | KSB834 |
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The KSB834O is a transistor used in many applications and is part of a family of transistors called bipolar junction transistors (BJT). It is classified as a single-transistor device, meaning it uses a single BJT in its design. This makes it ideal for use in low-power applications such as amplifiers and noise suppression circuits.
The KSB834O has various benefits over other types of transistors. It has very low input-output impedance which makes it suitable for circuits that require low impedance, such as high-frequency applications. This type of transistor also has excellent thermal stability, which allows it to work reliably at temperatures between -55 to +150 degrees Celsius. It also has a high gain gm of 50, which offers a large power gain.
The KSB834O is a normally-on device, meaning that when there is no current through the base, the device will remain in a conduction state. This is because of the built-in bias voltage which keeps the device turned on. This feature makes it useful in applications like switch-mode power supplies, where it can be used as a switch to turn the power supply on and off.
The KSB834O is also used in various amplifiers, as it is able to produce high saturation characteristics ideal for powering these types of circuits. This makes it a popular choice for low noise amplifiers and audio applications. It is also an excellent solution for applications requiring high frequency response, such as medical imaging and communications.
The working principle of the KSB834O is quite simple. It relies on a phenomenon called base-emitter injection. When a current is sent through the base of the BJT, it will inject electrons into the emitter and leave holes in the collector. This process allows the current to be transferred from the base to the collector, allowing the transistor to amplify the current. The amount of current that the device can amplify is controlled by the biasing voltage and the n-p-n junction of the device, resulting in the device being able to produce controlled conduction.
The KSB834O is a versatile transistor which can be used in a wide variety of applications. It is capable of providing very low output-impedance and high gain, making it an ideal choice for amplifiers, noise suppression circuits and switch-mode power supplies. It is also able to handle high temperatures, making it a suitable choice for extreme environments. The device\'s ability to handle high-frequency signals is also a major benefit and makes it a great solution for medical imaging and communications.
The specific data is subject to PDF, and the above content is for reference
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