Allicdata Part #: | KSE200STSTU-ND |
Manufacturer Part#: |
KSE200STSTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 25V 5A TO-126 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 5A 65MHz 15W Thro... |
DataSheet: | KSE200STSTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 1.8V @ 1A, 5A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 45 @ 2A, 1V |
Power - Max: | 15W |
Frequency - Transition: | 65MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126-3 |
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KSE200STSTU Application Field and Working Principle
The KSE200STSTU is a single transistor application field of bipolar junction transistors (BJT). It is a surface-mount transistor with a PNP structure, manufactured in planar technology and integrated with two junction diodes. KSE200STSTU transistors are widely used in a range of applications, mainly in switching, amplifying and processing applications, or in power supplies.
Overview
The KSE200STSTU is a low power bipolar junction transistor with a low noise, high gain and low saturation voltage. It can work in a temperature range from -65 °C to 175 °C, and it is fabricated with a planar process. It has both high performance ESD protection and high-speed switching capability. Its internal current amplification factor hFE is 40 and its current gain range varies between 40 and 200. With all of these characteristics, the KSE200STSTU can handle a switching or amplifying job of up to 3A, while also working efficiently in DC or RF circuits.
Structure and Working Principle
The KSE200STSTU consists of one each of an NPN and a PNP transistor in a dual package, with the NPN in series with the PNP. The NPN acts as a driving stage, whereas the PNP transistor amplifies the signal. The package also contains two base-emitter junctions, which act as ESD protection for the transistor. The collector of the NPN is connected to the base of the PNP through a resistor and a capacitance.
When the voltage is higher in the base of the NPN relative to the emitter, an inversion layer is formed in the PNP, which increases the current flow between the collector and the emitter. This current flow is amplified and serves the purpose of switching or amplifying the signal.
Applications
Due to its low power consumption, wide operating temperature range and high switching speed, the KSE200STSTU is best suited for amplifying and switching applications in DC or RF circuits. These applications include switching power supplies, automotive electronics and consumer electronics, such as small TVs or audio devices. Additionally, the KSE200STSTU can be used in motor control, home appliances and industrial electronics.
Conclusion
The KSE200STSTU is a single transistor application field of bipolar junction transistors (BJT) designed for low power consumption and a wide operating temperature range. The KSE200STSTU can work in a temperature range from -65 °C to 175 °C, and it is fabricated with a planar process. It is best suited for amplifying and switching applications in DC or RF circuits, such as switching power supplies, consumer electronics, motor control and home appliances.
The specific data is subject to PDF, and the above content is for reference
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