Allicdata Part #: | KSE2955TTU-ND |
Manufacturer Part#: |
KSE2955TTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 10A TO-220 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 10A 2MHz 600mW Th... |
DataSheet: | KSE2955TTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 8V @ 3.3A, 10A |
Current - Collector Cutoff (Max): | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 4V |
Power - Max: | 600mW |
Frequency - Transition: | 2MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
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KSE2955TTU Application Field and Working Principle
KSE2955TTU(KSE2955TTU_) are an innovative and robust device for single, bipolar transistor (BJT) applications. These transistors are used for a variety of applications such as amplifiers, audio, switching and motor control, and are becoming an increasingly popular choice for high-speed driver circuits, RF amplifiers, oscillators and data converters. KSE2955TTU transistors have been designed to provide superior performance with very low on-state and off-state losses, making them ideal for low power and high speed circuits.
KSE2955TTU transistors are produced with high-end, submicron scale process technology, making them even more ideal for use in low-power circuits. KSE2955TTU transistors are surface mounted devices, which provide reliability and protection against distortion due to vibration. KSE2955TTU transistors are widely used as linear amplifiers, and commonly used in digital systems to control data flow.
Working Principle
The KSE2955TTU bipolar transistors are based on the classic PNP / NPN device design, which uses a base-collector-emitter configuration. The idea behind this design is to allow relative voltage and current levels between the base and collector regions to control the electrical state. In the KSE2955TTU transistors, a small amount of current flows from the emitter to the base when forward biased, and in the opposite direction when reverse biased. This enables precise current control in the device, allowing exact gains and levels of controllable power. The KSE2955TTU transistors are able to switch from their "on" state to their "off" state quickly, making them an ideal choice for high speed applications. This fast switching ability also makes them suitable for applications such as motor control and audio, where quick response times are needed. In addition, the KSE2955TTU transistors are able to move from one state to another without drawing significant power from the circuit, making them an attractive choice for low power applications.
Application Field
KSE2955TTU transistors are used in a wide variety of applications, including linear amplifiers, data converters, high speed drivers, RF amplifiers, and oscillators. In addition, they can be used in automotive and industrial applications such as motor control, audio, and switching. KSE2955TTU transistors are also used in power switching applications, as they have the ability to rapidly switch from their "on" to "off" state.
KSE2955TTU transistors are popular with engineers and designers, as they provide high performance with low power dissipation. The transistors can handle high power loads, and can be used in high voltage and high current environments. The transistors are also suitable for operations at frequencies up to 1.6GHz, making them ideal for RF applications.
KSE2955TTU transistors are also highly reliable, due to their robust construction. The devices are also lead-free, making them environmentally friendly. With their excellent characteristics, these transistors are an ideal choice for a number of applications.
Conclusion
KSE2955TTU are a choice for single, bipolar transistors (BJT) applications. They are designed with high-end, submicron scale process technology, making them ideal for low-power circuits. The KSE2955TTU transistors have excellent characteristics which make them suitable for high-speed driver circuits, RF amplifiers, data converters, and linear amplifiers. They are well suited for high power applications due to their high voltage, high current capability and fast switch times. As a lead-free device, they are also efficient and offer increased reliability. With these excellent qualities, KSE2955TTU transistors are a popular choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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