KSE5020AS Allicdata Electronics
Allicdata Part #:

KSE5020AS-ND

Manufacturer Part#:

KSE5020AS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 500V 3A TO-126
More Detail: Bipolar (BJT) Transistor NPN 500V 3A 18MHz 30W Thr...
DataSheet: KSE5020AS datasheetKSE5020AS Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 300mA, 5V
Power - Max: 30W
Frequency - Transition: 18MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Description

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KSE5020AS is a special type of bipolar junction transistor (BJT) that is widely used in electronic devices and circuits. The device is made of semiconductor material, usually silicon, and consists of two p-n junctions, or base-emitter and collector-emitter junctions. This transistor is also known as a small signal transistor and is used for small signal amplifying and switching applications in high-frequency circuits such as in the radio and television, audio, and high-speed digital circuits.KSE5020AS is a small surface mount package (SOP) BJT. By using SOP, the KSE5020AS allows for higher packing densities than the through-hole equivalent. The device is a NPN transistor with a low noise discrete component. It is available with different gain ratings from 50 to 300. It features a low saturation voltage, high current gain and very low capacitance. It has a low turn-on voltage and can be used in various devices such as amplifiers, mixers, ADCs and DACs, audio amplifiers and RF switches.This component is an ideal choice for applications in low noise, precision and high accuracy circuits. It is used in wide variety of applications such as low noise amplifiers, low frequency oscillators, tuners, mixers, IF amplifiers, sinusoidal oscillators and other devices. The device is used in radio and television receivers, digital radio transceivers, base stations and many other electronic devices.The circuit below illustrates an application example of the KSE5020AS transistor. The circuit is a simple PNP-configuration amplifier for audio applications such as microphone preamplifiers, power amplifiers and active filters. The circuit consists of a PNP BJT, two resistors and a capacitor connected to the base of the BJT. The collector is then connected to a power supply and the emitter is connected to ground. The capacitor at the base of the transistor provides AC coupling which helps in suppressing the DC offset of the amplifier. The resistor R2 acts as a development resistor for determining the collector voltage and the resistor R1 provides the biasing of the transistor.The working principle of the KSE5020AS transistor is the same as of any other bipolar junction transistor. The base of the transistor acts as the control element which determines its operation. When a small current is applied to the base, the transistor switches on and a larger current can then pass through the collector. This larger current is then used to amplify the small signal from the base. The working of the transistor is dependent on the amount of current applied to the base, the biasing of the transistor, and its gain characterstics. The maximum current gain of the KSE5020AS is 300.KSE5020AS is a reliable and cost-effective solution for applications requiring low noise, precision and high accuracy. With its enhanced performance, reduced noise and high current gain, this device is ideal for a wide range of applications in radio, television, audio and digital circuits.

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