Allicdata Part #: | KSE5741TU-ND |
Manufacturer Part#: |
KSE5741TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 350V 8A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 350V 8A ... |
DataSheet: | KSE5741TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 400mA, 8A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 4A, 5V |
Power - Max: | 80W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
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The KSE5741TU is a high performance N-Channel enhancement mode lateral MOSFET. This transistor is manufactured in a planar stripe and DMOS technology. It is housed in a TO-92 package and is commonly used in loads such switching, amplification and signal processing. The KSE5741TU is specifically suited to applications that require high switching speed and low input capacitance.
Characteristics
The KSE5741TU has two distinct characteristics that provide particular benefits. The first is its low on-state resistance (RDS(on)) which decreases with an increase in drain-source voltage. This increases the efficiency of the device, allowing for higher current and power handling. The second is its low input capacitance. This allows for faster switching of the device, reducing the amount of time it takes to switch from one state to another.
Application Field
The range of applications for the KSE5741TU is very wide. It is commonly used as an amplifier, switching, and signal processing in automotive, telecommunications, computers, and consumer electronics. In addition it is used in a variety of industrial applications, such as industrial motor control, robotics, and home automation. Due to its low resistance characteristics, the KSE5741TU can be used in a wide range of high power applications, such as motor drives and high voltage power supplies.
Working Principle
The KSE5741TU is a type of transistor known as an N-Channel MOSFET. It works by transferring an electric charge between the N-Channel and the substrate material. It does this by creating a voltage difference between drain-source and gate-source. The voltage difference causes the substrate material to become electrically charged, allowing for current to flow from the N-Channel to the substrate material.
When the voltage at the gate-source is at the same or lower than the voltage at the drain-source, the transistor is in the off-state and no current can flow between the N-Channel and the substrate material. When the voltage of the gate is higher than the voltage of the drain-source, the transistor is in the on-state and current can flow.
Conclusion
The KSE5741TU is a high performance transistor designed for a wide range of applications. It features low on-state resistance and low input capacitance, allowing for better current and power handling. Its N-Channel MOSFET design provides efficient and fast switching capabilities, making it ideal for high current applications such as motor drives and high voltage power supplies.
The specific data is subject to PDF, and the above content is for reference
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