KSE800STU

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 1.5A, 3V
Power - Max:	40W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3

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The KSE800STU is a single-transistor bipolar junction transistor (BJT) integrated circuit (IC) that is commonly used for applications involving signal switching and amplifying. It is a small four-pin component that provides high power handling capabilities and can be used in a variety of applications. The KSE800STU has a voltage rating of 60V and supports up to 250mA of continuous current. Its power dissipation is 150mW and its impedance is typically between 10K and 100K ohms. With its low amount of power dissipation, it is highly efficient and easy to integrate into existing designs.The KSE800STU uses its bipolar junction transistor (BJT) to provide the necessary voltage and current to switch and amplify signals. It has two distinct regions in which electrical signals are manipulated to provide the desired circuit outputs. The first region contains two symmetrically arranged junctions, known as emitter and collector, which form the control input to the BJT. The second region consists of three terminals, known as the base, collector and emitter, which receive input voltage for operation.The base-collector junction serves as the control input to the transistor and is used to switch the signals from a low to a high state or from a high to a low state. When an input voltage is applied to this junction, it turns on the transistor and allows current to flow from the collector to the emitter. The amount of current that flows is determined by the amount of input voltage applied to the base-collector junction.The KSE800STU can switch and amplify low-level signals quickly and efficiently. It is often used to drive high-absorption loads such as relays, motor stages, and high-powered lamps. It can also be used to switch and amplify signals for signal detection, signal conditioning, and signal modulation.The KSE800STU has a built-in reverse protection circuitry that prevents access to high voltages and current. This allows the device to safely operate at higher voltages and currents. It also provides a fast response time to switching signals while maintaining a low power consumption.The components used in the KSE800STU are lead-free and RoHS compliant, reducing the environmental footprint of the device. The device is available in a variety of packages, including DIP, SOP, and SOIC, which makes it easy to integrate into a variety of circuit designs. It has a wide operating temperature range from -40°C to +125°C, making it suitable for a wide range of industrial and consumer applications.The KSE800STU is a versatile and reliable device that can be used in a variety of ways to switch and amplify low-level signals. Due to its highly efficient operation, it can be used for numerous applications, providing years of reliable performance. It is a cost-effective, easy to use solution for sensing, switching, and amplifying signal applications.

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