KSE803STU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	2.8V @ 40mA, 2A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 2A, 3V
Power - Max:	40W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3

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KSE803STU Application Field and Working Principle

KSE803STU is a single bipolar transistor device, belonging to the family of transistors. It is designed specifically for small-signal radio frequency operations and provides noise figures in the 2-12 dB range. KSE803STU is composed of an emitter, a base, and a collector. It is used in applications such as low-noise amplifiers, low-power oscillations, customized frequency synthesis, voltage biasing, and antenna tuning. KSE803STU is also used in applications such as high-frequency wireless applications, RF intermodulation products, transceiver receivers, and antennas.KSE803STU is an N-type transistor and is often used for general-purpose amplifier applications. It is also suited for use in low-noise amplifiers and discriminating circuits, particularly those in narrow-band applications. The low power drain and high voltage capability of the KSE803STU make it an excellent choice for amplifier applications where both low noise and high gain are desired. The working principle of KSE803STU transistors is based on the principles of thermionic emitted electrons. When the emitter-base voltage (Veb) is applied, electrons are thermionically generated. These electrons flow in the collector-base junction and are channeled out through the collector-base current (Icb). The current gain of the transistor is usually described as a DC common-emitter current gain, or hFE.KSE803STU transistors can provide low-power operation, high-input impedance, and high-gain performance. They are also well-suited for use in amplifier, oscillator, and other applications. As the device operates at low temperatures, it can minimize the leakage of current and improve the input impedance.In order to optimize performance of KSE803STU transistors, it is important to ensure that the operating conditions are correct. For example, the voltage applied to the emitter-base junction should be kept within certain limits. This helps to ensure that the transistor is operating in its linear range, where the gain is both consistent and predictable. It also helps to prevent excessive current levels and overheating. The high current capacity of the KSE803STU makes it an ideal choice for a variety of applications where low noise, wide dynamic range, and low power drain are desired. Its excellent thermal stability and easy-to-use packaging make it an excellent choice for low noise, lower power, and alternative frequency-synthesizer applications. KSE803STU is a high-performance transistor and is an ideal choice for a variety of RF applications. Moreover, its low power drain makes it well-suited for applications where size, weight, and power are critical. Finally, its enhanced DC current gain makes it an ideal choice for a variety of low-noise amplifier applications.

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