KSP05BU Allicdata Electronics
Allicdata Part #:

KSP05BU-ND

Manufacturer Part#:

KSP05BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 625m...
DataSheet: KSP05BU datasheetKSP05BU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSP05
Description

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In the electronics world, transistors are indispensable components for achieving efficient, reliable signals. There are many types of transistors in the market, each with its own betters performance. The KSP05BU transistor is a single piece, bipolar junction (BJT) profile. It is typically manufactured using NPN conductivity and is used extensively in linear and switching applications. In this article, we will explore the application field and working principle of KSP05BU transistors.

The KSP05BU transistor is designed to be optimized for linear applications. It is able to amplify analog signals while maintaining a good performance level. This transistor is able to handle a large amount of power, making it suitable for audio amplification and speech recognition applications. It is also used in the gaming industry, providing stable performance in gaming consoles and controller’s analog signal lines. Thanks to its versatility, KSP05BU transistors are also used for high-frequency applications, such as in mobile networks and automotive navigation systems.

The high-performing KSP05BU transistor has a maximum power dissipation of up to 1.5W, and a maximum collector current from 1A to 2.5A. The gate leakage current of KDSP05BU are typically lower than conventional transistors, resulting in efficient signal processing. The input and output impedance of KSP05BU is relatively low, allowing the transistor to operate at lower voltage than other devices. The KSP05BU transistor is able to manipulate signals over a wide range of frequencies while providing minimal distortion. It has good linearity within the frequency range, providing correct phase immutability at frequencies between 200kHz and 2GHz.

The operation of the KSP05BU transistor is based on the junction of two dissimilar semiconductors. The first of these is a P-type semiconductor, and the second is an N-type semiconductor. The junction of these two semiconductors is the base of the transistor, while the remaining two layers form the collector and the emitter. The collector and emitter of the transistor are then connected to a power supply, allowing the flow of current. When the transistor\'s base is connected to a low voltage voltage, it will close the switch and allow current to flow from the collector to the emitter. The KSP05BU also provides electrostatic latch features, which will close the circuit even when the base voltage is removed.

The KSP05BU transistor is able to efficiently process signals under high and low voltage of different types. It has a relatively lower operating current and less noise when compared to other transistors. Furthermore, the KSP05BU is extremely reliable and efficient, supplementing its versatility and providing enhanced performance in applications. All these features make the KSP05BU a must-have component for applications requiring high-performance signal processing.

The specific data is subject to PDF, and the above content is for reference

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