KSP42TA Allicdata Electronics
Allicdata Part #:

KSP42TAFSTB-ND

Manufacturer Part#:

KSP42TA

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 300V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 625m...
DataSheet: KSP42TA datasheetKSP42TA Datasheet/PDF
Quantity: 8000
1 +: $ 0.05000
10 +: $ 0.04850
100 +: $ 0.04750
1000 +: $ 0.04650
10000 +: $ 0.04500
Stock 8000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSP42
Description

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The KSP42TA is a single-package, bipolar junction transistor (BJT) designed to operate and deliver fantastic performance in various application fields. This NPN small signal transistor contains several structural features making it highly appealing to engineers. Along with its excellent radio frequency (RF) linearity, the KSP42TA’s low-noise, low-distortion properties makes it an excellent choice for use in amplifier and mixer circuits. Additionally, its ability to drive high current levels makes it a great choice for applications such as base station amplifiers.

The construction of the KSP42TA consists of a silicon die molded in a plastic package. The transistor\'s main feature is the NPN structure, which uses a three-layer semiconductor material to form a path between the base and the collector of the transistor. The base-collector junction is thick, enabling a very low current that provides excellent electrical characteristics. The dielectric isolation between the base and the collector helps to reduce leakage current. Furthermore, the KSP42TA features a thin-film metallization to increase manufacturing yields.

The working principle of the KSP42TA can be broken down into two main operations: Forward Biasing and Reverse Biasing. Forward biasing occurs when the positive voltage applied to the transistor’s base draws the electrons into the base and the Gates Collector junction is forward biased. This allows the current to flow from the collector to the base carrying the majority carriers into the BJT base. The current then exits the device through the collector. Reverse biasing occurs when the negative voltage applied to the transistor’s base pushes the electrons away from the base and the Gate Collector junction is reverse biased. This produces more electrons at the base-collector junction, allowing a higher current to flow through the device.

The application fields of KSP42TA are varied and many. Its low current level design makes it ideal for use in amplifier and mixer circuits. Its NPN structure enables it to provide accurate radio frequency (RF) linearity. KSP42TA is also very capable of driving high currents, which makes it an ideal choice for applications such as base station amplifiers. Furthermore, KSP42TA is also used in many other circuits, such as power supply regulators, audio amplifiers, and even television and phone networks.

In conclusion, the KSP42TA is a single-package BJT designed to operate in various application fields. Its NPN structure ensures excellent RF linearity and low-noise and low-distortion properties. Moreover, its ability to drive high current levels makes it highly suitable for use in amplifier and mixer circuits, and even base station amplifiers. Equipped with excellent features, KSP42TA is an ideal choice for engineers and further highlights the fantastic potential of bipolar junction transistors.

The specific data is subject to PDF, and the above content is for reference

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