KSP45BU Allicdata Electronics
Allicdata Part #:

KSP45BU-ND

Manufacturer Part#:

KSP45BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 350V 0.3A TO-92
More Detail: Bipolar (BJT) Transistor NPN 350V 300mA 625mW Thr...
DataSheet: KSP45BU datasheetKSP45BU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSP45
Description

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  1. Introduction

    The KSP45BU (also referred to as \'KSPxBU\') is a low-power, fast-switching NPN bipole transistor. It was designed specifically to be used in a wide range of applications, including logic switching, audio engineering, and pulse waveform generation. The device is rated for a collector-emitter breakdown voltage of 40V, with an integrated series gate-protection resistor. It also offers an output capacitance of 2.4pF which ensures excellent signal integrity and low ringing.

  2. Application Field

    The KSP45BU is designed for usage in a variety of applications. Its output characteristics make it suitable for use in such applications as:

    • Logic switching circuits, such as those found in computers, digital electronics, and consumer electronics.
    • Audio engineering, including mixing boards and amplifiers.
    • Pulse waveform generation for time-based applications such as radar and sonar.

    The KSP45BU is designed to function in a temperature range from -40 degrees Celsius to +125 degrees Celsius. This makes it suitable for use in various environments, including those with higher temperature requirements.

  3. Working Principle

    The KSP45BU is based on bipolar junction transistor (BJT) technology, and consists of three layers of silicon sandwiched between two metal layers. A voltage is applied to one side of the transistor, which controls the current flow between the two metal layers. This current flow is the basis of the device’s operation, and is used to switch between on and off states.

    When the applied voltage is low (less than 0.5V) the current flow is minimal. This is the off state and the transistor does not conduct. When the voltage is increased (above 0.5V for instance) the current flow increases, switching the transistor to its on state. This is the process by which the KSP45BU operates.

    The current flow is further regulated and modulated by the integrated series gate-protection resistor. This ensures that the current and surge capacity is kept to safe levels. This ultimately extends the lifetime of the device and reduces power dissipation.

  4. Conclusion

    The KSP45BU is an exceptionally powerful and reliable NPN bipole transistor. It is designed to function over a wide temperature range, and to protect itself from overheating and current surges through the integrated series gate-protection resistor. Its ability to switch quickly between on and off states makes it ideal for use in logic-switching applications, audio engineering, and pulse waveform generation.

The specific data is subject to PDF, and the above content is for reference

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