KSP75BU Allicdata Electronics
Allicdata Part #:

KSP75BU-ND

Manufacturer Part#:

KSP75BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 40V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP - Darlington 40V 500m...
DataSheet: KSP75BU datasheetKSP75BU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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Transistors are an essential component of electronics and are found in a wide variety of circuits. They are used to amplify signals, switch circuits on and off, and regulate power supplies. The KSP75BU is an NPN silicon power transistor and is one of the most common types of transistors used in various electronic applications. This article will explain the application fields and working principle of the KSP75BU.

The KSP75BU is a type of bipolar (BJT) transistor, which is a three-terminal semiconductor device used as an amplifier or switch. It consists of a collector, base, and emitter. The collector is the terminal with the higher potential and the emitter is the negative terminal. In order for the transistor to work, a small current is applied to the base, which in turn enables larger current to flow through the collector and the emitter. This is known as active current gain of the transistor.

The main application of the KSP75BU is power switching applications due to its high current gain, low saturation voltage, and fast switching speed. It can handle high current density and high power, making it suitable for high-power switching applications. Furthermore, the device features low on-resistance, low noise and low gate charge, making it ideal for switching power supply applications. In addition, it also features thermal protection and over-temperature protection, allowing it to be used in harsh environments.

The working principle of the KSP75BU is similar to that of other bipolar transistors, with a small current flowing through the base to create a larger current through the collector and emitter. The voltage applied to the base controls the amount of current flowing through the collector and emitter. When the base voltage is increased, more current flows through the collector and emitter, which amplifies the signal. This type of transistor is known as an amplifier transistor, as it amplifies an incoming signal.

The KSP75BU also works as a switch, allowing a certain amount of current to flow depending on the voltage applied to the base. This means that the current flowing through the collector and emitter can be adjusted to control the output. For example, when the base voltage is low, the current is off, and when the voltage is high, the current is on. This makes the KSP75BU suitable for switching applications such as for LEDs, relays, and transistors.

In conclusion, the KSP75BU is a type of NPN silicon power transistor used for a variety of purposes, from switching supplies to amplifying signals. It features low on-resistance, low noise, and fast switching speed, making it suitable for power switching applications. Furthermore, it also operates as an amplifier transistor, controlling the amount of current flowing through the collector and emitter depending on the voltage applied to the base. This makes the device suitable for a range of applications, making it one of the most popular transistors for use in various electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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