
Allicdata Part #: | KSP76BU-ND |
Manufacturer Part#: |
KSP76BU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 50V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 50V 500m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10000 @ 100mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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KSP76BU Application Field and Working Principle
The KSP76BU is a bipolar transistor that belongs to the single family. It is designed for use in high-power amplifying circuit designs. The device is able to provide power gains as high as 800 for its associated circuit. The KSP76BU also has an excellent heat dissipation capability, making it ideal for use in power amplifying circuits.
The transistor works by enabling or disabling its associated circuit according to various current levels supplied to the base. When the current level reaches a predetermined value, the base-emitter junction (BE) will be forward-biased, thus allowing the transistor to turn its associated circuit “on”. It is important to remember to apply the voltage/current values to respectively at both the collector and emitter terminals of the transistor when power is applied in order to ensure optimal performance.
The KSP76BU has a variety of application areas, including but not limited to audio power amplifiers, pulse amplifiers, switching circuits, and stereos. As stated previously, its high power gain rating makes it especially suitable for use in power amplifying circuits, where it can achieve the desired power output without having to sacrifice too much in terms of efficiency. With its reliable performance, the KSP76BU provides an ideal solution for those looking for a cost-effective power amplifier.
The KSP76BU is equipped with a wide-band output spectral range, a standard operating temperature range of -40°C to +125°C, and able to operate within a wide frequency range of 0-200MHz. Further, its package size is such that it fits in a variety of electronic systems, including personal computers, industrial automation systems and instrumentation systems. Besides, its ability to dissipate power and heat makes it an ideal pick for those with specific power demands.
The transistor is constructed out of two-terminal N-type silicon material, which enables it to provide superior temperatures stability and power gain. It has a dielectric insulation rating of class 2 and a maximum collector current of 3 amperes. The KSP76BU also exhibits good thermal stability and ESD immunity, making it an ideal choice for integrating with complex, power-hungry electrical systems.
In summary, the KSP76BU is a bipolar transistor that belongs to the single family, and is designed for use in high-power amplifying circuit designs. It has a variety of application areas, including but not limited to audio power amplifiers, pulse amplifiers, switching circuits, and stereos. Its wide-band output spectral range, its standard operating temperature range of -40°C to +125°C, and its ability to dissipate heat makes it an ideal pick for those with specific power demands. Its package size is such that it fits in a variety of electronic systems, including personal computers, industrial automation systems, and instrumentation systems.
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