KST05MTF Allicdata Electronics
Allicdata Part #:

KST05MTFTR-ND

Manufacturer Part#:

KST05MTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 0.5A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 350m...
DataSheet: KST05MTF datasheetKST05MTF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Power - Max: 350mW
Frequency - Transition: 100MHz
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: KST05
Description

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The KST05MTF is a 5 amp, 400V voltage regulator field effect transistor (FET). It is suitable for a wide range of high and low wattage applications, including switching, industrial control, and linear power supplies. It has a maximum input voltage of 60V, making it suitable for use in very high voltage applications. The KST05MTF has a high current handling capability and operates at low temperatures.

The KST05MTF is a single-stage field effect transistor with an N channel design. It has an advanced internal structure that is designed to limit the amount of heat generated during operation. The device has a low interface resistance, which helps to maintain a stable voltage regulator performance. The low on-state resistance of the device further contributes to its stability and improved performance.

The KST05MTF has an integrated feedback mechanism that helps to achieve proper voltage regulation. The feedback mechanism provides a closed loop system and is designed to maintain a set voltage regardless of the voltage applied to the device. The internal feedback mechanism also helps to reduce power dissipation of the device and prevents thermal runaway.

The KST05MTF is designed to operate in the range of temperatures from -25°C to +85°C. It has a high breakdown voltage of 400V and a maximum input voltage of 60V. The device also has a temperature coefficient of -0.05%/K and a safe exposure voltage at 500V.

The KST05MTF is a robust device and is designed for long life applications. It is designed to withstand high electromagnetic fields and its gate oxide is designed to provide maximum protection from EMI and ESD. In addition to its robustness, the device provides efficient operation with low power consumption.

The KST05MTF is an ideal device for applications such as switching, industrial control, and linear power supplies where voltage regulation is required. It has a high current rating, a low interface resistance, and a temperature coefficient of -0.05%/K. The device also has a feedback mechanism that helps to maintain a set voltage regardless of the input voltage. Additionally, the device has a high breakdown voltage and a safe exposure voltage at 500V. Overall, the device provides excellent performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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