KST06MTF Discrete Semiconductor Products |
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| Allicdata Part #: | KST06MTFTR-ND |
| Manufacturer Part#: |
KST06MTF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 80V 0.5A SOT-23 |
| More Detail: | Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 350m... |
| DataSheet: | KST06MTF Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max): | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 1V |
| Power - Max: | 350mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Base Part Number: | KST06 |
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KST06MTF is a silicon planar double-diffused NPN power transistors. It was designed for use as audio amplifiers, computer peripheral circuits and other high current applications. The KST06MTF transistors can provide power gain sufficient enough to be an excellent choice for audio applications. It can also be used as an efficient power supply for numerous devices, such as digital and analog circuits, motor control systems, industrial electronics, and robotics.
The KST06MTF transistors have a wide range applications and offer a good choice for a variety of applications. The transistor\'s construction involved etching away the substrate below the emitter to form a flat area for the collector, which makes it suitable for low voltage and current-handling applications. This type of construction also provides excellent thermal performance, as the heat from the collector is dissipated faster compared to other types of transistors due to the flat collector surface.
The transistor uses N-type epitaxial layer grown on an N-type substrate. The N-type substrate and the N-type epitaxial layer enable the transistor to handle higher collector to emitter voltage.
The base-collector junction is reverse biased, which increases gain and efficiency for the device. Additionally, the overall performance of the transistor is improved by its low noise and low distortion characteristics. The KST06MTF transistor is capable of delivering high output power and provides excellent frequency response and low thermal resistance.
The operating principle of the KST06MTF transistor is simple. When an input voltage is applied to the base of the transistor, most of the current flows through that path while some of it also flows through the emitter. This current flow through the emitter reduces the base-emitter voltage and triggers an avalanche breakdown of the collector-base junction. The breakdown of this junction causes a high switching current gain and allows the transistor to amplify the voltages and currents applied to the base.
The KST06MTF transistor is a versatile device with many applications such as audio amplifier and low to medium power applications such as high current relays, motor control systems, and industrial electronics. Its high switching current gain, low noise and low distortion characteristics, and excellent thermal performance make it an excellent choice for high power applications.
The specific data is subject to PDF, and the above content is for reference
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KST06MTF Datasheet/PDF