Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 2mA, 1V
Power - Max:	350mW
Frequency - Transition:	200MHz
Operating Temperature:	--
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3

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KST4125MTF application field and working principle

Transistors - Bipolar (BJT) - Single

The KST4125MTF is a single-transistor bipolar junction transistor (BJT) developed and produced by STMicroelectronics, an Italian multinational electronics and semiconductor manufacturer. It is designed to switch and amplify current across integrated circuits (ICs). With its low voltage, low power, and long-term reliability characteristics, the KST4125MTF is well suited for various applications, from simple switching functions to amplifying current or voltage signals.The KST4125MTF has three pins, an emitter, a base, and a collector. These pins allow current or voltage signals to be transferred to and from the device and the integrated circuit, meaning it can be used to amplify the current or voltage of an external signal. Additionally, the KST4125MTF has an excellent thermal stability and high maximum collector current of 200mA, which makes it ideal for use in embedded devices and automotive designs.The bipolar transistor is a Current-Controlled Device, meaning that its current characteristics are determined by the current flowing through the base. Changes in the base current, when amplified through the transistor, affect the overall collector-emitter current in accordance with the transistor’s current gain. The KST4125MTF, which uses the BJT’s current gain function to amplify current or voltage, is capable of providing switch-mode current with high switching frequency.In terms of application field, the KST4125MTF is ideal for uses that require low voltage, low power, and long-term reliability. It is often used in embedded devices and automotive designs, given its excellent thermal stability and high maximum collector current. Additionally, it is well suited for switching functions, such as in a power supply, circuit breaker, and electronic switch applications. It can be used to amplify signals in interconnected circuits, radio frequency (RF) amplifiers, large-scale integrated (LSI) circuits, and small signal devices.The KST4125MTF’s working principle is based on the standard BJT configuration, which works by controlling the collector-emitter current in accordance with the current flowing through the base. This can be used to amplify current or voltage signals, allowing it to be used in a variety of applications. To use the KST4125MTF, a fixed current is passed through the base, the magnitude of which is determined by the external circuitry. This current is then amplified by the collector-emitter current and becomes useful for switch-mode operation or current limiting. In conclusion, the KST4125MTF is a single-transistor bipolar junction transistor that is well suited for uses which require low voltage, low power, and long-term reliability. It is often used in embedded devices and automotive designs, as it has an excellent thermal stability and high maximum collector current. Additionally, it can be used to amplify current or voltage signals in a variety of applications, such as power supplies, circuit breakers, RF amplifiers, and LSI circuits. Its working principle is based on controlling the collector-emitter current in accordance with the current flowing through the base.

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