KST5179MTF Allicdata Electronics
Allicdata Part #:

KST5179MTF-ND

Manufacturer Part#:

KST5179MTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS RF NPN 12V 50MA SOT-23
More Detail: RF Transistor NPN 12V 50mA 900MHz 350mW Surface Mo...
DataSheet: KST5179MTF datasheetKST5179MTF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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KST5179MTF Transistors - Bipolar (BJT) - RF are RF transistors that are ideal for low noise amplifier and microwave power applications. The transistor is a NPN type bipolar and features excellent gain, power, and frequency characteristics. The KST5179MTF Transistors - Bipolar (BJT) - RF are manufactured using the state-of-the-art high frequency bipolar process. This process allows for high gain, excellent stability, long-term reliability and low noise performance.The KST5179MTF transistor is a high-performance, high-frequency Microwave Transistor. It is a NPN transistor with a gain of 18 dB and a power rating of 150 MHz @ 1 watt. The frequency range of the device extends up to 18GHz. The KST5179MTF Transistors - Bipolar (BJT) - RF have a high power gain of 18dB and its drain current is rated at 6A. Its thermal resistance is 65 °C/W and its maximum power dissipation is 24W. The junction to case thermal resistance is also very low at 1.02 °C/W . The KST5179MTF transistor is designed for use in wireless local area networks, communication transceivers and amplifiers. It is a cost-effective solution for high-frequency microwave performance. The KST5179MTF can be used as a low noise amplifier, mixer, oscillator, attenuator and signal conditioning. The working principle of the KST5179MTF transistor is based on the fact that it is a NPN type bipolar. The drain and source current flow depends on the base to emitter voltage. The NPN transistor can be turned on and off by applying the base current. When the base current is applied, the transistor starts to conduct and current passes from the drain to the source. The basic function of the transistor is to amplify an input signal and convert it into an output signal. The KST5179MTF Transistors - Bipolar (BJT) - RF provide superior RF performance in a high frequency range. The NPN transistor features high gain, low noise, long-term reliability and excellent power handling capability. It is well suited for low noise amplifiers and other applications within the RF spectrum.

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