Allicdata Part #: | KST5551MTFTR-ND |
Manufacturer Part#: |
KST5551MTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 160V 0.6A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 350... |
DataSheet: | KST5551MTF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Power - Max: | 350mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | KST5551 |
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KST5551MTF Application Field and Working Principle
KST5551MTF is a type of NPN silicon power transistor typically used in consumer and industrial applications. This device is the advanced version of the well-known KST5551 transistor, which has been around for many years. Compared to the older version, KST5551MTF boasts improved performance and higher power output, making it a valuable piece of electronic equipment for both enthusiasts and professionals.
The KST5551MTF is commonly used in electronic circuits as a power amplifier, voltage regulator, voltage switch, and RF amplifier. The device can handle high voltages, which makes it ideal for switching large loads and controlling high-power circuits. Its power dissipation rating is 1.5 watts, while its collector-emitter breakdown voltage is 50 volts.
In terms of its working principle, the KST5551MTF uses an NPN-type bipolar structure, with a single layer of silicon (silicon-doped n-region), and two layers of p-type material (boron-doped n-region). The base is a thin film of silicon (doped p-type) that allows current flow between the emitter and collector. It also serves as the connection point between the external circuit and the NPN transistor.
To use the KST5551MTF in an electronic setup, you must properly connect its different pins to the external circuit. The base pin is the input device and should be connected to the input voltage, the collector is the output device, and must be connected to the load, and the emitter is the ground connection. Additionally, the device must be properly biased in order for it to work correctly.
When the device is biased correctly, the base voltage will act as the controlling voltage, creating an electric field that allows current to flow between the emitter and collector. As current flows through the transistor, it amplifies the voltage, current, or power applied to it. This process is called amplification, and is what makes the KST5551MTF such a powerful device.
Overall, the KST5551MTF is a reliable, high-performance device. It is capable of handling large voltage and current signals, and can be used for a variety of applications, such as in power amplifiers, voltage regulators, and RF amplifiers. It is important to note, however, that the device must be properly connected and biased in order to achieve the desired performance.
The specific data is subject to PDF, and the above content is for reference
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