KST5087MTF

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KST5087MTF is a type of Bipolar Junction Transistor (BJT), and the letters MTF stand for medium power low frequency transistor and PNP transistor. It is used for circuit design and is suitable for industrial and military applications.

General Description

KST5087MTF is a rugged medium-power transistor with excellent thermal conductivity and high switching performance. It is used as a switching element in power classes ranging from 1-10 watts. Moreover, it has high reliability and immunity to heat and vibration. Its typical application field includes power switching, switching power supply and alternative current (AC) control, among other areas.

Key Features

KST5087MTF is composed of two PNP transistors and one NPN transistor in a three-terminal device with a common base mode. As a BJT, its most salient feature is its ability to handle current that is higher than the current ratings of field-effect transistors (FET). As it does not require a gate, it is easily wired in the circuit. KST5087MTF comes in both through-hole and surface-mount packages, making it ideal for a variety of applications.

Working Principle

BJT works on the principle of controlling current by voltage. KST5087MTF PNP transistor consists of two N-type semiconductor layers, an emitter and a collector, separated and connected by an intermediary layer called a base. Electrons are produced in the emitter and then injected into the base which act as an electric-field insulated barrier. Electrons accumulate in the collector and the current flow between the emitter and the collector determine the rate of the voltage. This process enables the transistor to control large current with a small voltage change. KST5087MTF also has a high breakdown voltage making it suitable for high-power switching applications.

Electrical Characteristics

KST5087MTF features a maximum collector-emitter voltage of 150V, a collector current of 10A and a transition frequency of 150MHz. It also has a low base-emitter voltage of 1V and a minimum collector-emitter saturation voltage of 0.1V. In terms of temperature, it has a maximum operating temperature of +150°C and temperature coefficient of 8mV/°C. Moreover, it has an hFE (DC current gain) of 20 at Ic=0.5mA and a storage temperature of -55 to +150°C. All these characteristics make KST5087MTF ideal for use in power switching and control applications.

Applications

Due to its excellent electrical characteristics, KST5087MTF is suitable for different industrial applications such as high power switching, switching power supplies, transformer control, inverter power control, AC power control, and frequency control. As these applications require reliable transistors capable of handling high voltages and current, KST5087MTF is a perfectly suitable choice. The transistor is also used in audio power amplifiers and motor control, among other applications.

Conclusion

KST5087MTF is a medium-power transistor that has excellent thermal conductivity and switching performance. Its single PNP make it suitable for a variety of applications, including audio power amplifiers, power switching, motor control and AC power control. Its most salient feature is that it is able to handle current higher than the current ratings of field-effect transistors. All in all, KST5087MTF is a reliable and versatile transistor and can be used for a wide range of industrial and military applications.

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