L2004F61 Allicdata Electronics
Allicdata Part #:

L2004F61-ND

Manufacturer Part#:

L2004F61

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: TRIAC SENS GATE 200V 4A TO202
More Detail: TRIAC Logic - Sensitive Gate 200V 4A Through Hole ...
DataSheet: L2004F61 datasheetL2004F61 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Triac Type: Logic - Sensitive Gate
Voltage - Off State: 200V
Current - On State (It (RMS)) (Max): 4A
Voltage - Gate Trigger (Vgt) (Max): 2V
Current - Non Rep. Surge 50, 60Hz (Itsm): 33A, 40A
Current - Gate Trigger (Igt) (Max): 5mA
Current - Hold (Ih) (Max): 10mA
Configuration: Single
Operating Temperature: -40°C ~ 110°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-202 Long Tab
Supplier Device Package: TO-202
Description

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Thyristors - TRIACs

The L2004F61 is a delicate and robust thyristor commonly known as a TRIAC, a critical component in electronics and automation industry. This device can be configured to control a range of applications and is designed to offer exceptional value and reliability. This article provides a comprehensive overview of the L2004F61 application field and working principle.

Application Field

The L2004F61 is used in a wide range of applications, including motor speed control, lighting systems, heating elements, power supplies and medical electronics. It is also used in industrial electric welding, communications, oil and gas industry and automotive applications.

The L2004F61 has advanced features, making it a suitable solution for applications that require precise and reliable control. This device can be used with multiple power sources and is suited for use in solar and batteries-powered systems, providing improved efficiency and power savings.

Additionally, the L2004F61 is also suited for applications that require high-speed operation, high-temperature resistance, low voltage driving and low power dissipation. It also offers both low and high resistance conduction, making it suitable for a wide range of applications.

Working Principle

The working principle of the L2004F61 is a combination of semiconductor elements and electrical resistive elements based around the IGBT process. The device uses three resistive elements, called the gate, the main current carrying channel and the anti-parallel channel. The gate forms an element in which an external electric field is established by the thyristor drive circuitry.

The main current carrying channel is formed by connecting a thyristor between an anode and a cathode in series with the gate. By connecting a gate voltage exceeding the breakover voltage, the thyristor becomes highly conductive, allowing a current to flow through the channel. To turn off the device, the gate voltage must go below the breakover voltage.

The anti-parallel channel is established by connecting the anode to the cathode in an opposing voltage and current circuit. When a positive potential is applied to the gate, the voltage across the anti-parallel channel, also known as the leakage current, becomes high enough to turn the thyristor off. This ensures an effective overcurrent protection of the circuit and to reduce the power consumption.

In conclusion, the L2004F61 is an essential thyristor with versatile features and excellent performance. Its combination of a resistive gate, the main current-carrying channel, and the anti-parallel channel allows for versatile and efficient control. This device has become a standard for reliable and precise control in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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