LDP01-33AY

Voltage - Clamping (Max) @ Ipp:	43.5V
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Capacitance @ Frequency:	--
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	--
Current - Peak Pulse (10/1000µs):	110A
Series:	Automotive, AEC-Q101, LDP01Y, TRANSIL™
Voltage - Breakdown (Min):	31.1V
Voltage - Reverse Standoff (Typ):	28V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS – Diodes are increasingly being used in an array of applications ranging from automotive to communications. The LDP01-33AY is an example of a TVS diode which is specifically designed for protection of high power electronics from destructive voltage transients. This paper will discuss the application field and working principle of the LDP01-33AY.The primary application of the LDP01-33AY is in mobile telecommunication systems. This is because the diode provides protection to base station waveguide components and amplifiers from destructive voltage transients. The device also provides a high level of surge protection for low-current analog, digital, or integrated circuits. The LDP01-33AY is specifically designed to be successfully placed on a printed circuit board, or integrated in a hybrid substrate.In order to function, the LDP01-33AY relies on two different electrical processes. The first process is called avalanche breakdown. In this process, the junction of the diode is subjected to a high reverse voltage which will cause electrons to dislodge from their covalent bonds and become free. As a result, an avalanche-like phenomenon is created and the current rises sharply. The second process is called thermal breakdown. In this process, the junction of the diode is heated when the current through the diode exceeds a certain threshold. This causes thermal expansion of the junction, which lowers the voltage. This, in turn, increases the current which causes more thermal expansion. This process reduces the threshold voltage and increases the junction temperature, which ultimately reduces the breakdown voltage. The LDP01-33AY has several advantages compared to traditional silicon diodes. It is capable of withstanding high surge currents which typical silicon diodes are unable to do. Additionally, the diode offers fast switching performance at very low operating levels, and has a minimal temperature rise while undergoing transients. The device is also robust and can operate in a number of ways, such as reversed bias or forward bias. Additionally, it can be used in environments where extreme temperatures and high humidity are present, due to its extreme weather resistant capabilities.Overall, the LDP01-33AY is an excellent device for protection of high power electronics from destructive voltage transients. It has a range of advantages compared to traditional silicon diodes, and is widely used in mobile telecommunication systems. The device relies on avalanche and thermal breakdown to function, and is also robust and highly weather resistant.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description