LFUSCD16065B Allicdata Electronics
Allicdata Part #:

F7412-ND

Manufacturer Part#:

LFUSCD16065B

Price: $ 7.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: DIODE SIC SCHOTKY 650V 16A TO247
More Detail: Diode Silicon Carbide Schottky 650V 16A (DC) Throu...
DataSheet: LFUSCD16065B datasheetLFUSCD16065B Datasheet/PDF
Quantity: 222
1 +: $ 6.68430
10 +: $ 6.01335
25 +: $ 5.47848
240 +: $ 4.94406
480 +: $ 4.54318
720 +: $ 4.14231
Stock 222Can Ship Immediately
$ 7.35
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 16A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 460µA @ 650V
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: 175°C (Max)
Description

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Diodes, also known as rectifiers, can be used to convert ac signals into dc signals. Their functionality is necessary for many applications, such as consumer electronics, industrial machinery, and automotive equipment. One such diode, the LFUSCD16065B, is an ideal choice for many applications due to its efficient performance and wide range of voltages. This article will discuss the application fields and working principles for the LFUSCD16065B.

The LFUSCD16065B can be used in a wide range of applications and is a popular choice for consumer electronics, process control, and communications systems. This diode is available in a range of voltages, from 5V to 60V, and can deliver currents up to 1A. It also offers low forward voltage drops and high reverse avalanche energy ratings. This makes the LFUSCD16065B a desirable choice for many applications that require efficient performance and reliability.

The working principle for the LFUSCD16065B is based on the PN junction diode. A PN junction diode consists of two regions of semiconductor material, one with a negative or “N” type doping, and the other with a positive or “P” type doping. When the negative and positive regions are joined together, they create a PN junction. This junction acts as a one-way gate and only allows electrons to flow in one direction, creating a rectifying effect.

When a positive voltage is applied to the anode, or positive region of the diode, electrons flow from the negative region to the positive region, creating a low resistance path. This low resistance path allows current to flow through the diode and results in the output voltage being lower than the input voltage. On the other hand, when a negative voltage is applied to the anode, the path from the anode to the cathode is blocked and no current can flow. This is known as reverse bias and causes the output voltage to be the same as the input voltage.

The LFUSCD16065B also offers multiple protection features. It has an internal Shottky clamp, which prevents the reverse current from becoming too large. It also has an internal temperature sensor and surge protection diodes, which help to limit the amount of inrush current when the diode is first turned on. This helps to ensure the safety of the equipment and prolong its operational life.

Overall, the LFUSCD16065B is a popular diode choice for applications that require efficient performance and reliable protection. Its wide range of input voltages and high forward current makes it suitable for a variety of applications. Its internal temperature rating and surge protection also ensure a longer operational life in harsh environments. Its working principles are based on the PN junction diode and it offers multiple protection features to ensure safety and efficiency.

The specific data is subject to PDF, and the above content is for reference

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