LFUSCD20065B Allicdata Electronics
Allicdata Part #:

F7413-ND

Manufacturer Part#:

LFUSCD20065B

Price: $ 8.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: DIODE SIC SCHOTKY 650V 20A TO247
More Detail: Diode Silicon Carbide Schottky 650V 20A (DC) Throu...
DataSheet: LFUSCD20065B datasheetLFUSCD20065B Datasheet/PDF
Quantity: 166
1 +: $ 7.75530
10 +: $ 6.98040
25 +: $ 6.35998
240 +: $ 5.73951
480 +: $ 5.27414
Stock 166Can Ship Immediately
$ 8.53
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 500µA @ 650V
Capacitance @ Vr, F: 580pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: 175°C (Max)
Description

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The LFUSCD20065B is a single-stage Schottky rectifier diode designed by Shanghai Lontec Si-Tech. It contains a reverse-biased Schottky diode. As a result, it is capable of both rectifying and switching. The LFUSCD20065B is typically used in applications such as power supplies, regulators, DC-DC converters, diodes, rectifiers, bridge rectifiers, linear regulators and so on.

In terms of its working principle, the LFUSCD20065B contains a majority carrier from its N-type region (anode) to its P-type region (cathode). If a reverse voltage is applied, the majority carriers at the junction between the anode and cathode will be driven back into the N-type region. This causes the potential barrier that was formed due to the built-in potential between the anode and cathode to be reduced and a reverse-bias voltage to be established. As a result, an electric current from the anode to the cathode will be prevented from passing through the diode.

At the same time, if a positive voltage is applied, it will cause majority carriers to be pushed away from the anode and allow them to be collected at the cathode. In this case, the N-type region becomes positively charged, while the P-type region become negatively charged. As a result, an electric current can now pass through the diode, in the opposite direction. This is the process known as rectification. Meanwhile, the Schottky junction also contains minority carriers that are free to move within the region. This allows a swift switching action and low forward voltage drop.

The LFUSCD20065B is designed to provide high levels of power efficiency in various electrical equipment and devices. It is designed to increase the efficiency of power supplies by providing a low amount of power losses and has a peak surge current rating of 650A, a reverse breakdown voltage of 100V, and a forward voltage drop of 600mA (at 1A). It also has a total capacitance of 30pF. Additionally, the LFUSCD20065B is also designed to minimize the amount of voltage ripple caused in the circuits due to the low forward voltage drop of its Schottky diode.

Overall, the LFUSCD20065B single-stage Schottky rectifier diode is an ideal choice for applications where high efficiency, low power losses, low forward voltage drop and low capacitance requirements are needed. This device can be used in a variety of equipment and devices such as power supplies, regulators, DC-DC converters, diodes, rectifiers, bridge rectifiers, linear regulators and so on.

The specific data is subject to PDF, and the above content is for reference

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