Allicdata Part #: | LKK47-06C5-ND |
Manufacturer Part#: |
LKK47-06C5 |
Price: | $ 25.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET 2N-CH 600V 47A ISOPLUS264 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 600V 47A Through ... |
DataSheet: | LKK47-06C5 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 22.94560 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Super Junction |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 47A |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 100V |
Power - Max: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | ISOPLUS264™ |
Supplier Device Package: | ISOPLUS264™ |
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LKK47-06C5 is an array of metal-oxide-semiconductor field-effect transistors (MOSFETs) manufactured and developed by Liaodong Electronics Company. It is an advanced MOSFET technology with a high-power output, excellent switching characteristics, and a simple structure that enables a wide range of applications.
The LKK47-06C5 provides a highest power rating of 46 amps and a low forward voltage drop of 0.2 V. It also has a fast switching speed of 0.1s, which is perfect for high-frequency switching applications. Moreover, it features a high-temperature thermal resistance of 30°C/W and a high-temperature insulation breakdown voltage of 600V, making it suitable for operating in high-temperature environments.
The MOSFETs included in the LKK47-06C5 are based on a depletion-polarized, self-aligned technology. This means that the source and drain electrodes are formed in a self-aligned manner, which yields superior performance and enables the MOSFETs to handle larger currents and operate at a higher voltage. Furthermore, the MOSFETs have a thick-oxidized, high-single-gate density, high-current and low-power dissipation structure which improves their performance in high-frequency switching applications.
The working principle of the LKK47-06C5 is simple. When a positive voltage is applied to the gate of the MOSFET, it forms a channel between the source and the drain electrodes,d allowing electrons to flow from the source to the drain. As the positive voltage increases, the width of the channel increases and more electrons are allowed to flow through, resulting in an increase in the drain current. As the voltage is reduced, the channel narrows, resulting in a decrease in the drain current. In short, the drain current is proportional to the gate voltage, allowing the LKK47-06C5 to be used in a wide variety of switching applications.
The LKK47-06C5 is suitable for applications that require high switching speed and high power output, such as lighting, motor control, switching power supplies, and uninterruptible power supplies. It is also well-suited for applications where high-temperature operation and high-current handling are required. With its excellent switching characteristics and robust structure, the LKK47-06C5 is an ideal choice for many types of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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