LTC1156CSW#PBF

Logic Voltage - VIL, VIH:	0.8V, 2V
Base Part Number:	LTC1156
Supplier Device Package:	16-SOIC
Package / Case:	16-SOIC (0.295", 7.50mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 70°C (TA)
Rise / Fall Time (Typ):	--
Input Type:	Non-Inverting
Current - Peak Output (Source, Sink):	--
Series:	--
Voltage - Supply:	4.5 V ~ 18 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	4
Channel Type:	Independent
Driven Configuration:	High-Side
Part Status:	Active
Packaging:	Tube

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1) Introduction: LTC1156CSW#PBF is a power management integrated circuit (PMIC) device classified as a Gate Driver. This Gate Driver features wide input voltage range of 4.5V to 18V, a high single-channel output current up to 1.5A, adjustable propagation and fast high-side rise time, and syncronizable PWM frequency control. Its low external parts count and its ability to be used in a slow or fast switching configuration makes it a great choice for SMPS applications.2) Application field: LTC1156CSW#PBF Gate Driver is ideal for synchronous rectifier buck and boost converter applications. Its high output current, fast rise time and wide input voltage range makes it perfect for controlling power switches (MOSFETs) at full load for 48V telecom systems, solar charge controllers, and automotive applications. It is also well suited for LED lighting designs with its fast high-side rise time and fast switching applications.3) Architecture: The LTC1156CSW#PBF features a single-channel 2A high-side MOSFET switch, an adjustable propagation delay with selectable dead time, and an integrated charge pump for high-side gate drive. It is configured so that the positive output voltage is used for high-side switching, while the negative output voltage is used for low-side switching. This Gate Driver also incorporates an advanced propagation delay architecture, which allows for synchronization of the PWM frequency. The chip also features an access port, PWM Frequency Synchronization, Under Voltage Lockout, selectable dead time, soft start, over temperature protection (OTP), and advanced fault protection (AFL).4) Working principle: LTC1156CSW#PBF works by using a high-side MOSFET switch to control the state of the gate drivers. When the high-side gate voltage is activated, the MOSFET source-drain junction turns on and current is able to flow through the MOSFET channel. The MOSFET gate is then held at the supply voltage, thus the high-side switches the power IC on. When the high-side gate voltage is deactivated, the MOSFET source-drain junction turns off, and the current through the channel ceases. The low-side gate voltage is then energized, thus the gate voltage switches off the power IC. The chip also utilizes adjustable dead time and propagation delay to ensure that the high-side gate is sufficiently energized prior to switching off the low-side gate. Additionally, the LTC1156CSW#PBF also features a charge pump, which is used to increase the gate drive voltage, allowing for faster switching speeds. The Propagation Delay, Dead Time, PWM Frequency Synch and Soft Start features provide a high level of versatility and control, and make this device a great fit for demanding SMPS applications.5) Conclusion: The LTC1156CSW#PBF is a versatile Gate Driver IC with a wide input voltage range and adjustable propagation and fast high-side rise time. Its low external parts count and its ability to be used in a slow or fast switching configuration make it an ideal choice for SMPS applications. Its syncronization of the PWM frequency and integration of a charge pump for high-side gate drive are also helpful features. The LTC1156CSW#PBF provides power management designers with high performance and flexibility in an extremely small package, making it the perfect choice for a range of power conversion and control applications.

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