LXES15AAA1-100 Circuit Protection |
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Allicdata Part #: | 490-5680-2-ND |
Manufacturer Part#: |
LXES15AAA1-100 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Murata Electronics North America |
Short Description: | TVS DIODE 1005 |
More Detail: | N/A |
DataSheet: | LXES15AAA1-100 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | -- |
Voltage - Breakdown (Min): | -- |
Voltage - Clamping (Max) @ Ipp: | -- |
Current - Peak Pulse (10/1000µs): | -- |
Power - Peak Pulse: | -- |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | 0.05pF @ 1MHz |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 0402 (1005 Metric) |
Supplier Device Package: | 1005 |
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LXES15AAA1-100 is a Transient Voltage Suppressor (TVS), which is an electronic component specially designed to protect electrical and electronic systems from electrostatic discharges or voltage spikes. In this article, the application field and working principle of the LXES15AAA1-100 will be explored in detail.
Application Field and Uses
The LXES15AAA1-100 is designed for use in low breakdown voltage environment. It operates with a breakdown voltage of 15 V and provides ultra-low leakage currents of 0.25mA. The low look current ensures high efficiency in surge current suppression.
The LXES15AAA1-100 is designed for a wide variety of applications, including conventional and microprocessor-based electronic equipment, wireless communication devices, and other consumer electronics. It can be used to protect against electro-static discharge (ESD) in electronic devices by providing a connection point for low-leakage current to protect against damage or malfunction caused by ESD. Additionally, it can be used to protect against overvoltage conditions in microprocessor-based electronic systems that can cause damage or malfunction.
The LXES15AAA1-100 has an industry standard package that can be mounted easily in most devices. This allows it to be used in many applications that require electrical protection, such as automotive, industrial, telecom, and medical applications.
Working Principle
The working principle of the LXES15AAA1-100 TVS is based on two main properties of semiconductors – conductance and breakdown voltage. The presence of electrons in a semiconductor material creates an electric field, which causes an increase in the current through the material when the voltage is increased. When the voltage is increased to a certain point, the electric field is strong enough to cause a large number of electrons to become excited. At this point, the voltage reaches the breakdown voltage of the material and current starts to flow uncontrollably causing a surge in the power supply.
The LXES15AAA1-100 utilizes the inverse of the breakdown voltage by providing a low resistance path for the current when the voltage exceeds its breakdown voltage. When the voltage rises above the breakdown voltage of the circuit, current will flow through the TVS. The TVS will then act as a resistor, limiting the current to a safe level. The resistance of the TVS will then increase as the voltage increases, protecting the electronic system from experiencing too much current.
In summary, the LXES15AAA1-100 is a convenient and cost-effective device for protecting electronic systems from damage and malfunction caused by electrostatic discharge or voltage spikes. It operates with a low breakdown voltage, allowing for efficient surge current suppression. It is designed for a wide variety of applications, including wireless communication devices, automotive, industrial, medical, and consumer electronic applications. Furthermore, its operation is based on the breakdown voltage of the semiconductor material to provide a low-resistance path to prevent the current from exceeding a safe level.
The specific data is subject to PDF, and the above content is for reference
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