M24C32-DRMF3TG/K

Series:	Automotive, AEC-Q100
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	32Kb (4K x 8)
Clock Frequency:	1MHz
Write Cycle Time - Word, Page:	4ms
Access Time:	450ns
Memory Interface:	I²C
Voltage - Supply:	1.8 V ~ 5.5 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WFDFN Exposed Pad
Supplier Device Package:	8-MLP (2x3)

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M24C32-DRMF3TG/K Application Field and Working Principle

Memory plays an important role in data storage and management in modern applications and computing environments. In the diverse development of memory technology, the M24C32-DRMF3TG/K is a popular and reliable choice for many applications. This article will discuss the application field and working principle of the M24C32-DRMF3TG/K.

Application Field

The M24C32-DRMF3TG/K, or the ST 3.0V 32K G2RNISM00 series i2c bus 8-pin, is a device-specific integrated circuit (IC) storage device, particularly suited to embedded data storage. The device\'s non-volatile memory is composed of 32,768 b buts and 128 pages, with each page able to store 256b. This allows for a maximum of 8Kb of user-defined data to be stored, making it a popular choice for many applications and devices needing low-power, non-volatile data storage.The device is suitable for the storage of a wide range of data, from user settings and calibration data, to executable applications and firmware. Its low-power 3V operation, and its wide temperature range of -40°C to +85°C make it a suitable memory for most applications.

Working Principle

The M24C32-DRMF3TG/K device contains a non-volatile memory that is based on a serial interface. The memory is comprised of two types of memory – the user memory and a protected area that is reserved for ST internal use only.The user memory is structured into 128 pages, each of 256 bytes—which are stored in the array of non-volatile memory cells.These pages can be used as bytes or words, depending on the configuration.The memory is accessed using an I2C-compatible serial interface protocol. Data may be read from, or written to the device in single-byte or multi-byte transactions. Single-byte transactions are accomplished by address transfer and the subsequent serial transfer of the data. Multi-byte transactions utilize the addressing process, followed by a burst current to increase transfer speeds.The device is equipped with a write-protection circuit. When enabled, this prevents write operations from taking place. In addition to this, the memory has built-in protection for its integrity, which will lock out any attempt to access data if it has been written to improperly.The down side to the device is that it is limited to writing one byte per page, making it unsuited for applications with large amounts of data or data with frequent changes. In such a case, a larger memory device may be a better choice.

Conclusion

The M24C32-DRMF3TG/K is a popular choice for low-power non-volatile memory storage and is suitable for a wide array of applications. Its non-volatile memory is composed of 32,768 b buts and 128 pages, with each page able to store 256b; this allows for a maximum of 8Kb of user-defined data to be stored.The device is accessed using an I2C-compatible serial interface protocol and it has built-in protection for its integrity. however, its limited one-byte writing per page makes it unsuited for applications with large amounts of data or frequent changes.

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