| Allicdata Part #: | 1086-3411-ND |
| Manufacturer Part#: |
M5KP110A |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 110V 177V DO204AR |
| More Detail: | N/A |
| DataSheet: |  M5KP110A Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 1 +: | 0.00000 |
Specifications
| Voltage - Clamping (Max) @ Ipp: | 177V |
| Supplier Device Package: | DO-204AR |
| Package / Case: | DO-204AR, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 5000W (5kW) |
| Current - Peak Pulse (10/1000µs): | 28A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 122V |
| Voltage - Reverse Standoff (Typ): | 110V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
Description
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M5KP110A is a Transil (TVS - Transient Voltage Suppressor Diode), suitable for applications requiring a higher breakdown voltage and low leakage current. It is a low capacitance pre-biased varistor, working in the ESD (Electro Static Discharge) protection mode. It is a high voltage transistor with a breakdown voltage of 110 V, and a maximum peak pulse power of 500 W (10/1000 μs or 1 second, whichever is less).Its design consists of two parts: the first part is the varistor, which is pre-biased in order to reduce the capacitance and leakage current; the second part is the high voltage bipolar transistor, which is used to provide a larger breakdown voltage and improved thermal reliability.When the device is operating in normal operation mode, it behaves like a standard varistor. In this mode, the electrons move in a forward direction within the P+ layer, which is connected to the N- layer. This process is responsible for the protection against over-voltages and surges by dissipating the energy away from the device.When the device is exposed to voltages higher than its breakdown voltage, it will trigger its second layer, the pre-biased NPN transistor. This transistor is designed to absorb the extra energy coming from the surge, reducing the capacity of the varistor to dissipate the energy, ensuring its maximum efficiency.The combination of the two layers makes this device stand out from others in its class. It is not only able to protect its host device from electrical surges, it also has an excellent EMC (Electro Magnetic Compatibility) performance, due to its pre-biased design. This gives the device a wide range of applications, including automotive, industrial and consumer electronics.In addition, the M5KP110A is designed to be compatible with various packages, allowing it to be used in almost any type of circuit, regardless of the size restrictions. The internal circuitry of the device is largely unaffected by temperature variations, meaning it is suitable for use in harsh environments.Overall, the M5KP110A provides an excellent combination of performance and reliability, making it an invaluable component for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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